SPB21N10 Infineon Technologies, SPB21N10 Datasheet

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SPB21N10

Manufacturer Part Number
SPB21N10
Description
MOSFET N-CH 100V 21A D2PAK
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of SPB21N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 44µA
Gate Charge (qg) @ Vgs
38.4nC @ 10V
Input Capacitance (ciss) @ Vds
865pF @ 25V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SPB21N10INTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPB21N10
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SPB21N10 G
Manufacturer:
INFINEON
Quantity:
12 500
Feature


 


SIPMOS     Power-Transistor
Type
SPB21N10
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
C
C
C
C
1 75°C operating temperature
N-Channel
Enhancement mode
Avalanche rated
dv/dt rated
=21A, V
=21 A , V
=25°C
=100°C
=25°C
=25°C
DS
DD
=80V, di/dt=200A/µs, T
=25V, R
GS
=25
Package
P-TO263-3-2

j
= 25 °C, unless otherwise specified
jmax
=175°C
Ordering Code
Q67042-S4102
Page 1
Symbol
I
I
E
dv/dt
V
P
T
D
D puls
j ,
AS
GS
tot
T
stg
Marking
21N10
-55... +175
55/175/56
Product Summary
V
R
I
Value
D
15.0
DS
DS(on)
±20
130
21
84
90
6
P-TO263-3-2
2005-02-14
100
SPB21N10
80
21
Unit
A
mJ
kV/µs
V
W
°C
V
m
A


Related parts for SPB21N10

SPB21N10 Summary of contents

Page 1

... T C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Ordering Code Q67042-S4102 Symbol puls E AS dv/dt =175°C jmax tot stg Page 1 SPB21N10 Product Summary 100 DS(on P-TO263-3-2 Marking 21N10 Value 21 15.0 84 130 6 ±20 90 -55... +175 55/175/56 2005-02-14 V ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) Page 2 SPB21N10 Values Unit min. typ. max 1.7 K Values Unit min. typ. max. 100 ...

Page 3

... G t d(off =80V, I =21A =80V, I =21A 10V GS V (plateau) V =80V, I =21A =25° =0V, I =21A =50V /dt=100A/µ Page 3 SPB21N10 Values min. typ. max. 6.5 12 650 865 - 140 186 - 80 120 - 3.9 5.2 - 15.5 23.3 - 28.9 38 0. 153 192 2005-02-14 Unit ...

Page 4

... Safe operating area parameter : ° SPP21N10 Drain current parameter: V SPP21N10 °C 190 Transient thermal impedance thJC parameter : 6.8µs SPP21N10 10 K/W 10 µ 100 µ Page 4 SPB21N10 ) 100 120 140 160 ) 0.50 single pulse - 2005-02-14 °C 190 T C 0.20 0.10 0.05 0.02 0. ...

Page 5

... Typ. transfer characteristics parameter µ Typ. drain-source on resistance R DS(on) parameter: V 260 [V]= a= 5.6 b= 6.0 220 c= 7.0 200 d= 8.0 e= 10.0 180 c 160 140 120 100 Typ. forward transconductance DS(on)max fs parameter Page [V]= c= 7.0 d= 8.0 a= 5.6 e= 10 =25° 2005-02-14 SPB21N10 ...

Page 6

... Typ. gate threshold voltage V GS(th parameter 140 °C 100 200 Forward character. of reverse diode parameter iss C oss C rss Page 2 =44µA D 1.5 -65 - µ SPP21N10 °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1.6 2 SPB21N10 =0.25mA 115 °C 175 2005-02-14 ...

Page 7

... Drain-source breakdown voltage (BR)DSS j SPP21N10 120 V 114 112 110 108 106 104 102 100 -60 - Typ. gate charge parameter 125 145 °C 185 T j 100 140 °C 200 T j Page 7 ) Gate = 21 A pulsed D SPP21N10 max 0 SPB21N10 DS max Gate 2005-02-14 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Page 8 SPB21N10 2005-02-14 ...

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