SPB21N10 Infineon Technologies, SPB21N10 Datasheet - Page 6

• Manufacturer Part Number: SPB21N10
• Description: MOSFET N-CH 100V 21A D2PAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB21N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 44µA
• Gate Charge (qg) @ Vgs: 38.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 865pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SPB21N10INTR

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f ( V
parameter: V
DS(on)
m
pF


10
10
10
10
340
280
240
200
160
120
80
40
0
-60
4
3
2
1
0
SPP21N10
DS
= f ( T
)
5
-20
D
GS
j
)
= 15.0 A, V
10
=0V, f =1 MHz
20
15
98%
60
typ
20
GS
100
25
= 10 V
30
140 °C
C oss
C rss
C iss
V
T
V
j
DS
200
40
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
V
2.5
1.5
A
-1
4
3
2
-65
2
1
0
0
= f ( T j )
SD
SPP21N10
-35
)
0.4
GS
-5
0.8
p
= V
= 80 µs
25
DS
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
55
1.6
I
D
85
=44µA
I
D
2
=0.25mA
2005-02-14
115
SPB21N10
2.4
°C
T
V
V
j
SD
175
3