SPD35N10 Infineon Technologies, SPD35N10 Datasheet - Page 5

• Manufacturer Part Number: SPD35N10
• Description: MOSFET N-CH 100V 35A DPAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD35N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1570pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: SP000013853; SPD35N10INTR; SPD35N10XT; SPD35N10XTINTR; SPD35N10XTINTR

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f ( V
A
A
90
70
60
50
40
30
20
10
60
40
30
20
10
0
0
0
2
DS
GS
); T
1
); V
p
p
= 80 µs
3
= 80 µs
j
DS
=25°C
2


e
2 x I
3
4
d
D
4
x R
5
5
DS(on)max
6
V GS [V]=
a= 5
b= 6
c= 8
d= 10
e= 12
V
c
b
V
a
V
V
Preliminary data
DS
GS
8
7
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m
= f( I
500
300
200
100


S
24
20
18
16
14
12
10
0
8
6
4
2
0
0
0
D
= f ( I
); T
a
10
5
j
=25°C
D
fs
GS
20
)
10
b
30
40
15
50
20
60
70
25
SPD35N10
2002-01-30
V
a= 5
b= 6
c= 8
d= 10
e= 12
GS
80
c
A
[V]=
I
I
A
D
D
d
e
100
35