SPD35N10 Infineon Technologies, SPD35N10 Datasheet - Page 8

• Manufacturer Part Number: SPD35N10
• Description: MOSFET N-CH 100V 35A DPAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD35N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1570pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: SP000013853; SPD35N10INTR; SPD35N10XT; SPD35N10XTINTR; SPD35N10XTINTR

SPD35N10
Preliminary data
Published by
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© Infineon Technologies AG 1999
All Rights Reserved.
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
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2002-01-30
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