BSP318S E6327 Infineon Technologies, BSP318S E6327 Datasheet - Page 7

• Manufacturer Part Number: BSP318S E6327
• Description: MOSFET N-CH 60V 2.6A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP318S E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP318SE6327T; SP000011112

Typ. capacitances
C = f(V
parameter: V
Avalanche Energy
parameter: I
R
GS
mJ
pF
10
10
10
65
55
50
45
40
35
30
25
20
15
10
= 25
5
0
3
2
1
20
0
DS
)
5
40
D
GS
= 2.6 A, V
10
=0 V, f =1 MHz
60
15
80
E
20
AS
DD
100
= f ( T
25
= 25 V
120
30
j
)
°C
V
T
V
j
C
C
C
DS
iss
oss
rss
160
40
Rev 2.2
Page 7
Forward characteristics of reverse diode
I
parameter: T j , t
Typ. gate charge
V
parameter: I
F
GS
= f (V
10
10
10
10
A
V
16
12
10
= f ( Q
-1
8
6
4
2
0
0.0
2
1
0
0
BSP318S
BSP318S
SD
0.4
)
Gate
0,2
4
D
= 2.6 A pulsed
V
0.8
)
DS max
p
= 80 µs
8
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
12
1.6
2.0
16
0,8
2008-03-21
BSP318S
V
2.4
DS max
nC
V
V
Q
SD
Gate
3.0
24