BSP603S2L Infineon Technologies, BSP603S2L Datasheet - Page 5

• Manufacturer Part Number: BSP603S2L
• Description: MOSFET N-CH 55V 5.2A SOT-223
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSP603S2L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 2V @ 50µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1390pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP603S2LT; SP000013597; SP000431792

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f ( V
A
A
13
11
10
11
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
0
BSP603S2L
DS
GS
i
h
P
g
0.5
tot
f
); T
0.5
); V
= 1.8W
e
p
p
= 80 µs
1
= 80 µs
j
DS
=25°C
1.5
1


2 x I
2
1.5
2.5
D
x R
2
3
DS(on)max
3.5
2.5
c
a
d
b
V GS [V]
4
a
b
c
d
e
f
g
h
i
V
V
V
V
DS
10.0
GS
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.5
3.5
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
= f( I
110


S
90
80
70
60
50
40
30
20
10
26
22
20
18
16
14
12
10
0
8
6
4
2
0
0
0
D
BSP603S2L
V
= f ( I
); T
GS
3.4
d
[V] =
3.6
j
e
=25°C
2
D
fs
GS
2
)
3.8
f
4.0
g
4
4
4.5
h
d
10.0
i
6
6
BSP603S2L
8
2002-06-11
8
i
g
A
e
A
h
I
f
D
I
D
11
12