MOSFET N-CH 60V 280MA SOT-323

BSS138W E6433

Manufacturer Part NumberBSS138W E6433
DescriptionMOSFET N-CH 60V 280MA SOT-323
ManufacturerInfineon Technologies
SeriesSIPMOS®
BSS138W E6433 datasheet
 

Specifications of BSS138W E6433

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs3.5 Ohm @ 200mA, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C280mAVgs(th) (max) @ Id1.4V @ 26µA
Gate Charge (qg) @ Vgs1.5nC @ 10VInput Capacitance (ciss) @ Vds43pF @ 25V
Power - Max500mWMounting TypeSurface Mount
Package / CaseSOT-323Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesBSS138WE6433
SP000014284
  
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®
SIPMOS
Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
Type
Package
BSS138W
PG-SOT-323
BSS138W
PG-SOT-323
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD class
(JESD22-A114-HBM)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 2.41
Product Summary
V
DS
R
DS(on),max
I
D
Tape and Reel
Marking
L6327: 3000
SWs
/
l
L6433: 10000
SWs
Symbol Conditions
I
T
=25 °C
D
A
T
=70 °C
A
I
T
=25 °C
D,pulse
A
I
=0.28 A, V
=48 V,
D
DS
dv /dt
di /dt =200 A/µs,
T
=150 °C
j,max
V
GS
P
T
=25 °C
tot
A
T
, T
j
stg
page 1
BSS138W
60
V
3.5
0.28
A
PG-SOT-323
Value
Unit
0.28
A
0.22
1.12
6
kV/µs
±20
V
0 (<250V)
0.50
W
-55 ... 150
°C
55/150/56
2009-11-19

BSS138W E6433 Summary of contents

  • Page 1

    SIPMOS Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant Type Package BSS138W PG-SOT-323 BSS138W PG-SOT-323 Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous drain ...

  • Page 2

    Parameter Thermal characteristics Thermal resistance, junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance Rev. 2.41 Symbol Conditions R thJA =25 °C, unless ...

  • Page 3

    Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

  • Page 4

    Power dissipation P =f(T ) tot A 0.5 0.4 0.3 0.2 0 Safe operating area I =f =25 ° parameter limited by on-state ...

  • Page 5

    Typ. output characteristics I =f =25 ° parameter 0 0.5 0.4 0.3 0.2 0 Typ. transfer characteristics I =f(V ); ...

  • Page 6

    Drain-source on-state resistance =10 V DS(on % -60 - Typ. capacitances C =f MHz; T ...

  • Page 7

    Typ. gate charge V =f =0.2 A pulsed GS gate D parameter 0.2 0.4 Q Rev. 2.41 14 Drain-source breakdown voltage V =f(T BR(DSS) 70 ...

  • Page 8

    Package Outline: Footprint: Rev. 2.41 Packaging: page 8 BSS138W 2009-11-19 ...

  • Page 9

    ... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...