IPP80N06S3L-08 Infineon Technologies, IPP80N06S3L-08 Datasheet

MOSFET N-CH 55V 80A TO-220

IPP80N06S3L-08

Manufacturer Part Number
IPP80N06S3L-08
Description
MOSFET N-CH 55V 80A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP80N06S3L-08.pdf (9 pages)

Specifications of IPP80N06S3L-08

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.9 mOhm @ 43A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.2V @ 55µA
Gate Charge (qg) @ Vgs
134nC @ 10V
Input Capacitance (ciss) @ Vds
6475pF @ 25V
Power - Max
105W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.9 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
80 A
Power Dissipation
105 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPP80N06S3L-08
IPP80N06S3L-08IN
IPP80N06S3L08X
IPP80N06S3L08XK
SP000088127

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IPP80N06S3L-08
Manufacturer:
INFINEON
Quantity:
12 500
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IPP80N06S3L-08/3N06L08
Manufacturer:
INFINEON
Quantity:
10 000
Rev. 1.1
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB80N06S3L-08
IPI80N06S3L-08
IPP80N06S3L-08
®
-T2 Power-Transistor
2)
3)
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
j
=25 °C, unless otherwise specified
1)
2)
Symbol
I
I
E
I
V
P
T
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
3N06L08
3N06L08
3N06L08
stg
PG-TO263-3-2
T
T
V
T
I
T
D
C
C
C
C
GS
=40 A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
=10 V
Conditions
2)
GS
Product Summary
V
R
I
D
=10 V
DS
DS(on),max
IPI80N06S3L-08, IPP80N06S3L-08
PG-TO262-3-1
(SMD version)
-55 ... +175
55/175/56
Value
320
240
±16
105
80
61
80
IPB80N06S3L-08
PG-TO220-3-1
7.6
80
55
2007-11-07
Unit
A
mJ
A
V
W
°C
V
m
A

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IPP80N06S3L-08 Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Rev. 1.1 Product Summary PG-TO263-3-2 Marking 3N06L08 3N06L08 3N06L08 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse = =25 °C tot stg page 1 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value = 320 240 80 ±16 105 -55 ... +175 55/175/ 7 Unit °C 2007-11-07 ...

Page 2

... (BR)DSS =55 µA GS(th = DSS T =25 ° = =125 ° = GSS =29 A DS(on = SMD version SMD version page 2 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Values min. typ. max 1 1.2 1 100 = 100 - 11.5 14.2 - 11.2 13.9 - 6.5 7.9 - 6.2 7.6 Unit K µ 2007-11-07 ...

Page 3

... = = plateau =25 ° S,pulse = =25 ° =27 /dt =100 A/µ 1.4 K/W the chip is able to carry 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Values min. typ. max. - 6475 = 812 - 775 - 4 0.6 0 Unit - 134 - V ...

Page 4

... V DS Rev. 1.1 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 [V] page 4 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-11-07 ...

Page 5

... Typ. transfer characteristics parameter 160 140 120 100 Rev. 1.1 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 4 3 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on -55 ° °C 175 ° [V] page 5 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L- ° 100 I [ -60 - 100 T [°C] j 150 140 180 2007-11-07 ...

Page 6

... SD Rev. 1.1 10 Typ. capacitances 550µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 0.1 [V] page 6 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L- MHz DS GS Ciss Coss Crss [ j(start) 100°C 150° 100 t [µ 25°C 1000 2007-11-07 ...

Page 7

... A 200 80 A 100 100 T [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.1 14 Drain-source breakdown voltage V BR(DSS 150 200 16 Gate charge waveforms 100 150 [nC] page 7 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L- -60 - 100 T [° 140 180 Q Q gate gate 2007-11-07 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPI80N06S3L-08, IPP80N06S3L-08 page 8 IPB80N06S3L-08 2007-11-07 ...

Page 9

... Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 1.1 Data Sheet 1.1 Data Sheet 1.1 Data Sheet 1.1 Rev. 1.1 IPI80N06S3L-08, IPP80N06S3L-08 Date 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 07 ...

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