IPP80N06S3L-08 Infineon Technologies, IPP80N06S3L-08 Datasheet
IPP80N06S3L-08
Specifications of IPP80N06S3L-08
IPP80N06S3L-08IN
IPP80N06S3L08X
IPP80N06S3L08XK
SP000088127
Available stocks
Related parts for IPP80N06S3L-08
IPP80N06S3L-08 Summary of contents
Page 1
... IEC climatic category; DIN IEC 68-1 Rev. 1.1 Product Summary PG-TO263-3-2 Marking 3N06L08 3N06L08 3N06L08 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse = =25 °C tot stg page 1 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value = 320 240 80 ±16 105 -55 ... +175 55/175/ 7 Unit °C 2007-11-07 ...
Page 2
... (BR)DSS =55 µA GS(th = DSS T =25 ° = =125 ° = GSS =29 A DS(on = SMD version SMD version page 2 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Values min. typ. max 1 1.2 1 100 = 100 - 11.5 14.2 - 11.2 13.9 - 6.5 7.9 - 6.2 7.6 Unit K µ 2007-11-07 ...
Page 3
... = = plateau =25 ° S,pulse = =25 ° =27 /dt =100 A/µ 1.4 K/W the chip is able to carry 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Values min. typ. max. - 6475 = 812 - 775 - 4 0.6 0 Unit - 134 - V ...
Page 4
... V DS Rev. 1.1 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 [V] page 4 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-11-07 ...
Page 5
... Typ. transfer characteristics parameter 160 140 120 100 Rev. 1.1 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 4 3 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on -55 ° °C 175 ° [V] page 5 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L- ° 100 I [ -60 - 100 T [°C] j 150 140 180 2007-11-07 ...
Page 6
... SD Rev. 1.1 10 Typ. capacitances 550µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 0.1 [V] page 6 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L- MHz DS GS Ciss Coss Crss [ j(start) 100°C 150° 100 t [µ 25°C 1000 2007-11-07 ...
Page 7
... A 200 80 A 100 100 T [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.1 14 Drain-source breakdown voltage V BR(DSS 150 200 16 Gate charge waveforms 100 150 [nC] page 7 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L- -60 - 100 T [° 140 180 Q Q gate gate 2007-11-07 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPI80N06S3L-08, IPP80N06S3L-08 page 8 IPB80N06S3L-08 2007-11-07 ...
Page 9
... Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 1.1 Data Sheet 1.1 Data Sheet 1.1 Data Sheet 1.1 Rev. 1.1 IPI80N06S3L-08, IPP80N06S3L-08 Date 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 07 ...