SPB80N03S2-03 Infineon Technologies, SPB80N03S2-03 Datasheet
SPB80N03S2-03
Specifications of SPB80N03S2-03
SPB80N03S203T
Related parts for SPB80N03S2-03
SPB80N03S2-03 Summary of contents
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... P- TO262 -3-1 Ordering Code Q67040-S4247 Q67040-S4258 Q67042-S4079 Symbol puls jmax AR dv/dt =175°C jmax tot Page 1 SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 Product Summary 3.1 max. SMD version DS(on TO263 -3-2 P- TO220 -3-1 Marking 2N0303 2N0303 2N0303 Value 80 80 320 810 30 6 ±20 300 T -55... +175 ...
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... Diagrams are related to straight lead versions Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = V V GS(th DSS I GSS R 4) DS(on) = 0.5K/W the chip is able to carry I thJC Page 2 SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 Values min. typ. max. - 0.3 0 Values min. typ. max 2 0.01 ...
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... Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge SPP80N03S2-03,SPB80N03S2-03 Symbol Conditions ≥2 DS(on)max I ...
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... Safe operating area parameter : ° SPP80N03S2- Drain current parameter: V SPP80N03S2- °C 190 Max. transient thermal impedance thJC parameter : K 16.0µ 100 µ Page 4 SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 ) ≥ 100 120 140 160 ) SPP80N03S2- 0.50 single pulse - 2003-05-09 °C 190 T C 0.20 0.10 0.05 0.02 0. ...
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... Typ. drain-source on resistance R DS(on) parameter Ω [V] a 4.0 b 4.2 c 4 4.8 f 5 5 Typ. forward transconductance g = f(I DS(on)max fs parameter: g 180 140 120 100 Page 5 SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2- SPP80N03S2- [ 4.4 4.6 4.8 5.0 5.2 5.4 10 100 ); T =25° 120 160 ...
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... Typ. gate threshold voltage V GS(th parameter 2.5 1.5 0.5 140 °C 100 200 Forward character. of reverse diode parameter iss C oss 10 C rss Page 6 SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2- 1.25 mA 250 µ -60 - 100 ) µs p SPP80N03S2- °C typ 175 °C typ °C (98 175 °C (98%) ...
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... Drain-source breakdown voltage (BR)DSS j parameter SPP80N03S2- -60 - Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 ) Gate = 80 A pulsed D SPP80N03S2-03 0 max 0 100 120 2003-05-09 DS max 160 nC Q Gate ...
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... If they fail reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N03S2-03, BSPB80N03S2-03 and BSPI80N03S2-03, for simplicity the device is referred to by the term SPP80N03S2-03, SPB80N03S2-03 and SPI80N03S2-03 throughout this documentation SPP80N03S2-03,SPB80N03S2-03 Page 8 ...