SPB80N04S2-04 Infineon Technologies, SPB80N04S2-04 Datasheet
SPB80N04S2-04
Specifications of SPB80N04S2-04
SPB80N04S204T
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SPB80N04S2-04 Summary of contents
Page 1
... D P- TO262 -3-1 P- TO263 -3-2 Ordering Code Symbol puls jmax AR dv/dt =175°C jmax tot stg Page 1 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2- 3.4 max. SMD version DS(on TO220 -3-1 Marking 2N0404 2N0404 2N0404 Value 80 80 320 810 30 6 ±20 300 -55... +175 55/175/56 2004-05- Unit ...
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... Diagrams are related to straight lead versions Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = V V GS(th DSS I GSS 4) R DS(on) = 0.5K/W the chip is able to carry I thJC Page 2 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 Values min. typ. max. - 0.3 0 Values min. typ. max 2 0.01 ...
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... Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge SPP80N04S2-04,SPB80N04S2-04 Symbol Conditions 2 DS(on)max ...
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... Safe operating area parameter : ° SPP80N04S2- Drain current parameter: V SPP80N04S2- °C 190 Max. transient thermal impedance thJC parameter : K 59.0µ 100 µ Page 4 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2- 100 120 140 160 ) SPP80N04S2- 0.50 single pulse - 2004-05-24 °C 190 T C 0.20 0.10 0.05 0.02 0. ...
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... Typ. drain-source on resistance R DS(on) parameter [ 4 5 Typ. forward transconductance = f(I g DS(on)max fs parameter: g 160 S 120 100 Page 5 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2- SPP80N04S2- [ 5.0 5.3 5.5 5.7 6.0 10 100 120 ); T =25° 100 120 140 160 2004-05- 160 200 I D ...
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... Typ. gate threshold voltage V GS(th parameter 2.5 1.5 0.5 140 °C 100 200 Forward character. of reverse diode parameter iss C oss 10 C rss Page 6 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2- 1. 250 µ -60 - 100 ) µ SPP80N04S2- °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1 ...
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... Drain-source breakdown voltage = (BR)DSS j parameter SPP80N04S2- -60 - Typ. gate charge = parameter 125 145 °C 185 T j 100 140 °C 200 T j Page 7 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 ) Gate = 80 A pulsed D SPP80N04S2-04 V 0,2 DS max 0 100 120 140 160 180 2004-05-24 DS max 210 nC Q Gate ...
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... If they fail reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N04S2-04 and BSPB80N04S2-04, for simplicity the device is referred to by the term SPP80N04S2-04 and SPB80N04S2-04 throughout this documentation. SPP80N04S2-04,SPB80N04S2-04 ...