SPB80N06S2-05 Infineon Technologies, SPB80N06S2-05 Datasheet

MOSFET N-CH 55V 80A D2PAK

SPB80N06S2-05

Manufacturer Part Number
SPB80N06S2-05
Description
MOSFET N-CH 55V 80A D2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of SPB80N06S2-05

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
6790pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000016351
SPB80N06S205T
OptiMOS
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
Type
SPP80N06S2-05
SPB80N06S2-05
Maximum Ratings, at T
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
C
C
C
=80A, V
=80 A , V
=25°C
=25°C
=25
DS
DD
=44V, di/dt=200A/µs, T
® Power-Transistor
=25V, R
GS
Package
P- TO220 -3-1
P- TO263 -3-2
=25Ω
1)
j
= 25 °C, unless otherwise specified
jmax
=175°C
Ordering Code
Q67040-S4245
Q67040-S4255
jmax
Page 1
2)
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
Product Summary
V
R
I
D
P- TO263 -3-2
stg
DS
DS(on)
Marking
2N0605
2N0605
max. SMD version
-55... +175
55/175/56
Value
±20
320
810
300
80
80
30
SPB80N06S2-05
6
SPP80N06S2-05
P- TO220 -3-1
2003-04-24
4.8
55
80
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A

Related parts for SPB80N06S2-05

SPB80N06S2-05 Summary of contents

Page 1

... Ordering Code Q67040-S4245 Q67040-S4255 Symbol puls jmax AR dv/dt =175°C jmax tot stg Page 1 SPP80N06S2-05 SPB80N06S2-05 55 4.8 max. SMD version 80 P- TO220 -3-1 Marking 2N0605 2N0605 Value 80 80 320 810 30 6 ±20 300 -55... +175 55/175/56 2003-04-24 V mΩ A Unit A mJ kV/µs ...

Page 2

... Diagrams are related to straight lead versions Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R 4) DS(on) = 0.5K/W the chip is able to carry I thJC Page 2 SPP80N06S2-05 SPB80N06S2-05 Values Unit min. typ. max. - 0.3 0.5 K Values Unit min. typ. max ...

Page 3

... I =80A =2.2Ω d(off =44V, I =80A =44V, I =80A 10V GS V (plateau) V =44V, I =80A =25° =0V, I =80A =30V /dt=100A/µ Page 3 SPP80N06S2-05 SPB80N06S2-05 Values Unit min. typ. max. 66 132 - 5110 6790 pF - 1330 1760 - 280 430 - 130 170 - 5 320 - 0.9 1 130 160 nC 2003-04-24 ...

Page 4

... Safe operating area parameter : SPP80N06S2- Drain current parameter: V SPP80N06S2- °C 190 Max. transient thermal impedance thJC parameter : K 26.0µ 100 µ Page 4 SPP80N06S2-05 SPB80N06S2-05 ) ≥ 100 120 140 160 ) SPP80N06S2- 0.50 single pulse - 2003-04-24 °C 190 T C 0.20 0.10 0.05 0.02 0. ...

Page 5

... Typ. drain-source on resistance R DS(on) parameter Ω [V] a 4.5 b 5.0 c 5.3 d 5 6.0 g 6 Typ. forward transconductance g = f(I DS(on)max fs parameter: g 170 140 120 100 Page 5 SPP80N06S2-05 SPB80N06S2- SPP80N06S2- [ 5.8 6.0 6.8 9.3 10 100 ); T =25° 100 120 140 160 2003-04- ...

Page 6

... Typ. gate threshold voltage V GS(th parameter 2.5 1.5 0.5 140 °C 100 200 Forward character. of reverse diode parameter iss C oss 10 C rss Page 6 SPP80N06S2-05 SPB80N06S2- 1. 250 µ -60 - 100 ) µs p SPP80N06S2- °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1 ...

Page 7

... Drain-source breakdown voltage (BR)DSS j parameter SPP80N06S2- -60 - Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPP80N06S2-05 SPB80N06S2-05 ) Gate = 80 A pulsed D SPP80N06S2-05 0 max 0 100 120 140 160 2003-04-24 DS max 200 nC Q Gate ...

Page 8

... If they fail reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N06S2-05, BSPB80N06S2-05 and BSPI80N06S2-05, for simplicity the device is referred to by the term SPP80N06S2-05, SPB80N06S2-05 and SPI80N06S2-05 throughout this documentation Page 8 SPP80N06S2-05 ...

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