SPB80N06S2-07 Infineon Technologies, SPB80N06S2-07 Datasheet
SPB80N06S2-07
Specifications of SPB80N06S2-07
SPB80N06S207T
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SPB80N06S2-07 Summary of contents
Page 1
... Repetitive avalanche energy, limited by T Reverse diode dv/dt I =80A, V =44V, di/dt=200A/µ Gate source voltage Power dissipation T =25°C C Operating and storage temperature IEC climatic category; DIN IEC 68-1 SPP80N06S2-07,SPB80N06S2-07 P- TO262 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6024 Q67060-S6026 Q67060-S6037 Symbol puls E AS ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) = 0.6K/W the chip is able to carry I thJC Page 2 SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 Values min. typ. max. - 0.4 0 Values min. typ. max 2 ...
Page 3
... Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge SPP80N06S2-07,SPB80N06S2-07 Symbol Conditions ≥2 DS(on)max I ...
Page 4
... Safe operating area parameter : °C C SPP80N06S2- Drain current parameter: V SPP80N06S2- °C 190 Max. transient thermal impedance thJC parameter : K 15.0µ 100 µ Page 4 SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 ) ≥ 100 120 140 160 ) SPP80N06S2- 0.50 single pulse - 2003-05-09 °C 190 T C 0.20 0.10 0.05 0.02 0. ...
Page 5
... A 120 100 Typ. drain-source on resistance R DS(on) parameter Ω [ 3 4 4 Typ. forward transconductance g = f(I DS(on)max fs parameter: g 120 S 100 Page 5 SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2- SPP80N06S2- [ 4.2 4.5 4.8 5.0 5.3 10 100 ); T =25° 100 2003-05- 140 120 150 I D ...
Page 6
... Gate threshold voltage V GS(th parameter 2.5 1.5 0.5 140 °C 100 200 Forward character. of reverse diode parameter iss 10 C oss 10 C rss Page 6 SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2- 900 µA 180 µ -60 - 100 ) µs p SPP80N06S2- °C typ 175 °C typ °C (98 175 °C (98%) ...
Page 7
... Drain-source breakdown voltage (BR)DSS j parameter SPP80N06S2- -60 - Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 ) Gate = 80 A pulsed D SPP80N06S2-07 0 max 0 2003-05-09 DS max 100 130 nC Q Gate ...
Page 8
... If they fail reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N06S2-07, BSPB80N06S2-07 and BSPI80N06S2-07, for simplicity the device is referred to by the term SPP80N06S2-07, SPB80N06S2-07 and SPI80N06S2-07 throughout this documentation SPP80N06S2-07,SPB80N06S2-07 Page 8 ...