BF908WR,115 NXP Semiconductors, BF908WR,115 Datasheet

MOSFET NCH DUAL GATE 12V CMPAK-4

BF908WR,115

Manufacturer Part Number
BF908WR,115
Description
MOSFET NCH DUAL GATE 12V CMPAK-4
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF908WR,115

Package / Case
CMPAK-4
Transistor Type
N-Channel Dual Gate
Frequency
200MHz
Voltage - Rated
12V
Current Rating
40mA
Noise Figure
0.6dB
Current - Test
15mA
Voltage - Test
8V
Configuration
Single Dual Gate
Continuous Drain Current
0.04 A
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
8 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
300 mW
Transistor Polarity
N-Channel
Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
12V
Noise Figure (max)
2.5dB
Frequency (max)
1GHz
Package Type
CMPAK
Pin Count
3 +Tab
Input Capacitance (typ)@vds
3.1@8V@Gate 1/1.8@8V@Gate 2pF
Output Capacitance (typ)@vds
1.7@8VpF
Reverse Capacitance (typ)
0.03@8VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
300mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1969-2
934031470115
BF908WR T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
BF908WR
N-channel dual-gate MOS-FET
Preliminary specification
1995 Apr 25

Related parts for BF908WR,115

BF908WR,115 Summary of contents

Page 1

DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification DISCRETE SEMICONDUCTORS 1995 Apr 25 ...

Page 2

... NXP Semiconductors N-channel dual-gate MOS-FET FEATURES  High forward transfer admittance  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier GHz. APPLICATIONS  VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment ...

Page 3

... NXP Semiconductors N-channel dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current D I gate 1 current G1 I gate 2 current G2 P total power dissipation tot T storage temperature stg T operating junction temperature j Note 1 ...

Page 4

... NXP Semiconductors N-channel dual-gate MOS-FET THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a R thermal resistance from junction to soldering point th j-s Notes 1. Device mounted on a printed-circuit board the temperature at the soldering point of the source lead. s STATIC CHARACTERISTICS = 25 C; unless otherwise specified. ...

Page 5

... NXP Semiconductors N-channel dual-gate MOS-FET 40 handbook, halfpage I D (mA −0.6 −0.4 −0  Fig.3 Transfer characteristics; typical values (  Fig.5 Forward transfer admittance as a function of drain current; typical values. 1995 Apr 25 MRC281 handbook, halfpage 0.2 0.4 0.6 V G1-S ( MRC280 ...

Page 6

... NXP Semiconductors N-channel dual-gate MOS-FET PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 0.7 1.1 mm 0.1 0.8 0.3 0.5 OUTLINE VERSION IEC SOT343R 1995 Apr scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1 ...

Page 7

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 8

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 9

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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