BF991,215 NXP Semiconductors, BF991,215 Datasheet - Page 2

• Manufacturer Part Number: BF991,215
• Description: MOSFET NCH DUAL GATE 20V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF991,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 100MHz
• Gain: 29dB
• Voltage - Rated: 20V
• Current Rating: 20mA
• Noise Figure: 0.7dB
• Current - Test: 10mA
• Voltage - Test: 10V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.02 A
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Application: VHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 20V
• Power Gain (typ)@vds: 29@10VdB
• Noise Figure (max): 2dB
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.1@10V@Gate 1/1@10V@Gate 2pF
• Output Capacitance (typ)@vds: 1.1@10VpF
• Reverse Capacitance (typ): 0.02@10VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1970-2; 933642000215; BF991 T/R

NXP Semiconductors
FEATURES
APPLICATIONS
PINNING
QUICK REFERENCE DATA
V
I
P
T
C
C
F
SYMBOL
D
Y
Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
VHF applications such as:
– VHF television tuners and FM tuners
– Professional communication equipment.
j
DS
tot
ig1-s
rs
N-channel dual-gate MOS-FET
fs
PIN
1
2
3
4
drain-source voltage
drain current
total power dissipation
junction temperature
transfer admittance
input capacitance at gate 1 f = 1 MHz; I
feedback capacitance
noise figure
SYMBOL
s, b
g
g
d
2
1
PARAMETER
source
drain
gate 2
gate 1
DESCRIPTION
up to T
f = 1 kHz; I
f = 1 MHz; I
f = 200 MHz; G
I
D
= 10 mA; V
Rev. 03 - 20 November 2007
amb
= 60 C
D
D
D
= 10 mA; V
= 10 mA; V
= 10 mA; V
DS
S
CONDITIONS
= 10 V; V
= 2 mS; B
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
handbook, halfpage
Marking code: %MA.
DS
DS
DS
Fig.1 Simplified outline (SOT143) and symbol.
Top view
G2-S
= 10 V; V
S
= 10 V; V
= 10 V; V
= B
= 4 V
Sopt
4
1
;
G2-S
G2-S
G2-S
= 4 V
3
2
= 4 V 2.1
= 4 V 20
14
1
TYP.
MAM039
Product specification
g 2
g 1
20
20
200
150
2
MAX.
BF991
2 of 7
V
mA
mW
mS
pF
fF
dB
C
UNIT
s,b
d