PD57002S-E STMicroelectronics, PD57002S-E Datasheet

IC TRANS RF PWR LDMOST PWRSO-10

PD57002S-E

Manufacturer Part Number
PD57002S-E
Description
IC TRANS RF PWR LDMOST PWRSO-10
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD57002S-E

Transistor Type
LDMOS
Frequency
960MHz
Gain
15dB
Voltage - Rated
65V
Current Rating
250mA
Current - Test
10mA
Voltage - Test
28V
Power - Output
2W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
0.25A
Drain Source Voltage (max)
65V
Output Power (max)
2W(Min)
Power Gain (typ)@vds
15(Min)dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Straight lead)
Pin Count
4
Input Capacitance (typ)@vds
7.1@28VpF
Output Capacitance (typ)@vds
5.8@28VpF
Reverse Capacitance (typ)
0.1@28VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
45(Min)%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
4750mW
Vswr (max)
10(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
497-6718-5
PD57002S-E

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD57002S-E
Manufacturer:
ST
0
Part Number:
PD57002S-E
Manufacturer:
ST
Quantity:
20 000
Features
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to 1
GHz. The device is designed for high gain and
broadband performance operating in common
source mode at 28 V. It is ideal for digital cellular
BTS applications requiring high linearity. The
PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performance and ease of assembly. Mounting
recommendations are available in www.st.com/rf/
(look for application note AN1294).
Table 1.
December 2010
Excellent thermal stability
Common source configuration
P
New RF plastic package
OUT
= 2 W with 15dB gain @ 960 MHz / 28 V
PD57002S-E
Order code
PD57002-E
Device summary
N-channel enhancement-mode, lateral MOSFETs
RF POWER transistor, LdmoST plastic family
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
Doc ID 12332 Rev 3
Package
Figure 1.
Gate
Pin connection
PowerSO-10RF
PowerSO-10RF
(straight lead)
(formed lead)
PD57002-E
Packing
Tube
Tube
Source
Drain
www.st.com
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PD57002S-E Summary of contents

Page 1

... RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Table 1. Device summary Order code PD57002-E PD57002S-E December 2010 RF POWER transistor, LdmoST plastic family Figure 1. Gate Package PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) ...

Page 2

Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

PD57002-E 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T Symbol V (BR)DSS DISS STG 1.2 Thermal data Table 3. Thermal data Symbol R thJC CASE Parameter Drain-source voltage ...

Page 4

Electrical characteristics 2 Electrical characteristics +25 C CASE 2.1 Static Table 4. Static Symbol DSS GSS GS( ...

Page 5

PD57002-E 3 Impedance Figure 2. Current conventions Table 7. Impedance data Freq. (MHz) 925 945 960 Z (Ω) IN 1.894 - j 13.43 2.440 - j 12.53 2.760 - j 12.13 Doc ID 12332 Rev 3 Impedance Z (Ω) DL ...

Page 6

Typical performance 4 Typical performance Figure 3. Capacitance vs supply voltage C (pF) 100 Vdd (V) Figure 5. Gate-source voltage vs case temperature Vgs (Normalized) 1.05 1.025 1 0.975 0.95 0.925 0.9 -50 ...

Page 7

PD57002-E Figure 6. Output power vs input power Pout (W) 2.5 2 1 0.01 0.02 0.03 0.04 Pin (W) Figure 8. Power gain vs output power Pg (dB) 18 925 MHz 17 945 MHz 16 960 ...

Page 8

Typical performance Figure 10. Output power vs drain voltage Pout (W) 2.5 2 1 12.5 15 17.5 20 Vdd (V) Figure 12. Output power vs drain current Pout (W) 3 925 MHz 2.5 2 1.5 1 ...

Page 9

PD57002-E Figure 14. Output power vs gate-source voltage Pout (W) 2.5 2 1.5 945 MHz 1 925 MHz 960 MHz 0 0.5 1 1.5 2 2.5 Vgs (V) Pin = 17.4dBm Vdd = 28V 3 3.5 4 4.5 ...

Page 10

Common source s-parameter 5 Common source s-parameter Table 8. S-parameter for PD57002-E (V Freq < Φ (MHz) 50 0.980 -16 100 0.972 -31 150 0.966 -46 200 0.951 -59 250 0.944 -70 300 0.936 -80 ...

Page 11

PD57002-E Table 9. S-parameter PD57002-E (V Freq < Φ (MHz) 50 0.998 -17 100 0.989 -32 150 0.975 -47 200 0.965 -61 250 0.954 -72 300 0.943 -82 350 0.939 -92 400 0.934 -100 450 ...

Page 12

Common source s-parameter Table 10. S-parameter for PD57002-E (V Freq < Φ (MHz) 50 0.969 -17 100 0.959 -33 150 0.949 -48 200 0.925 -61 250 0.915 -73 300 0.906 -83 350 0.890 -92 400 ...

Page 13

PD57002-E Table 11. S-parameter for PD57002-E (V Freq < Φ (MHz) 50 0.986 -18 100 0.972 -34 150 0.955 -50 200 0.934 -63 250 0.921 -75 300 0.909 -85 350 0.897 -94 400 0.895 -102 ...

Page 14

... Common source s-parameter Table 12. S-parameter for PD57002S-E (V Freq < Φ (MHz) 50 0.993 -16 100 0.987 -31 150 0.979 -46 200 0.961 -59 250 0.950 -71 300 0.933 -80 350 0.928 -89 400 0.924 -97 450 0.922 -103 500 0.924 -110 550 0.922 -115 600 0.923 -120 650 0.922 -125 700 ...

Page 15

... PD57002-E Table 13. S-parameter for PD57002S-E (V Freq < Φ (MHz) 50 0.997 -17 100 0.988 -32 150 0.972 -47 200 0.962 -60 250 0.950 -72 300 0.942 -82 350 0.934 -91 400 0.932 -99 450 0.928 -106 500 0.924 -112 550 0.923 -117 600 0.922 -122 650 0.922 -126 700 0.923 -130 750 0 ...

Page 16

... Common source s-parameter Table 14. S-parameter for PD57002S-E (V Freq < Φ (MHz) 50 0.996 -17 100 0.982 -33 150 0.962 -48 200 0.946 -61 250 0.931 -73 300 0.919 -83 350 0.911 -92 400 0.906 -99 450 0.903 -106 500 0.901 -112 550 0.900 -117 600 0.900 -122 650 0.902 -126 700 ...

Page 17

... PD57002-E Table 15. S-parameter for PD57002S-E (V Freq < Φ (MHz) 50 0.990 -18 100 0.976 -35 150 0.952 -50 200 0.933 -64 250 0.917 -75 300 0.905 -85 350 0.895 -94 400 0.891 -102 450 0.886 -108 500 0.884 -114 550 0.884 -119 600 0.883 -124 650 0.886 -128 700 0.889 ...

Page 18

Package mechanical data 6 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 19

PD57002-E Table 16. PowerSO-10RF formed lead (Gull Wing) mechanical data Dim Note: Resin protrusions not included (max value: 0.15 ...

Page 20

Package mechanical data Table 17. PowerSO-10RF straight lead mechanical data Dim Note: Resin protrusions not included (max value: 0.15 mm per ...

Page 21

PD57002-E Figure 17. Tube information Doc ID 12332 Rev 3 Package mechanical data 21/23 ...

Page 22

Revision history 7 Revision history Table 18. Document revision history Date 11-May-2006 28-May-2010 24-Dec-2010 22/23 Revision 1 Initial release. 2 Added: Table 6: Moisture sensitivity 3 Content reworked to improve readability Doc ID 12332 Rev 3 PD57002-E Changes level. ...

Page 23

... PD57002-E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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