PD55003-E STMicroelectronics, PD55003-E Datasheet - Page 15

• Manufacturer Part Number: PD55003-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD55003-E

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 2.5A
• Current - Test: 50mA
• Voltage - Test: 12.5V
• Power - Output: 3W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Configuration: Single
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 31.7 W
• Maximum Operating Temperature: + 165 C
• Forward Transconductance Gfs (max / Min): 1 S
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 40V
• Output Power (max): 3W(Min)
• Power Gain (typ)@vds: 17dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 1S
• Input Capacitance (typ)@vds: 36@12.5VpF
• Output Capacitance (typ)@vds: 24@12.5VpF
• Reverse Capacitance (typ): 2.4@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 52%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 31700mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5297-5

PD55003-E, PD55003S-E
7
Circuit layout
Figure 31. Test fixture component layout
Figure 32. Test circuit photomaster
Doc ID 12273 Rev 3
6.4 inches
Circuit layout
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