PD20010-E STMicroelectronics, PD20010-E Datasheet - Page 8

• Manufacturer Part Number: PD20010-E
• Description: TRANS RF N-CH FET POWERSO-10RF
• Manufacturer: STMicroelectronics

Specifications of PD20010-E

• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 11dB
• Voltage - Rated: 40V
• Current Rating: 5A
• Current - Test: 150mA
• Voltage - Test: 13.6V
• Power - Output: 10W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 5A
• Drain Source Voltage (max): 40V
• Output Power (max): 15W(Typ)
• Power Gain (typ)@vds: 11dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Input Capacitance (typ)@vds: 45@12.5VpF
• Output Capacitance (typ)@vds: 36@12.5VpF
• Reverse Capacitance (typ): 1.2@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 53%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 59000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

Note:
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Table 9.
Resin protrusions not included (max value: 0.15 mm per side)
Figure 6.
Dim.
A1
A2
A3
A4
D1
E1
E2
E3
R1
R2
T1
T2
D
E
G
a
b
F
c
PowerSO-10RF straight lead mechanical data
Package dimensions
15.15
Min.
1.62
0.15
0.23
3.4
1.2
5.4
9.4
7.4
9.3
7.3
5.9
10 deg
6 deg
mm.
Typ.
1.67
5.53
0.27
15.4
3.5
1.3
0.2
0.2
9.5
7.5
9.4
7.4
6.1
0.5
1.2
0.8
15.65
Max.
1.72
0.25
5.65
0.32
0.25
3.6
1.4
9.6
7.6
9.5
7.5
6.3
CRITICAL DIMENSIONS:
- Overall width (L)
0.064
0.134
0.046
0.005
0.212
0.008
0.370
0.290
0.595
0.365
0.286
0.231
Min.
10 deg
0.065
0.137
0.007
0.007
0.217
0.374
0.295
0.606
0.292
0.019
0.047
0.031
6 deg
Inch.
Typ.
0.05
0.01
0.37
0.24
0.068
0.142
0.054
0.009
0.221
0.012
0.377
0.298
0.615
0.375
0.294
0.247
Max.
0.01