PD55025S-E STMicroelectronics, PD55025S-E Datasheet - Page 12

• Manufacturer Part Number: PD55025S-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD55025S-E

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 14.5dB
• Voltage - Rated: 40V
• Current Rating: 7A
• Current - Test: 200mA
• Voltage - Test: 12.5V
• Power - Output: 25W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Drain Source Voltage Vds: 40V
• Continuous Drain Current Id: 7A
• Power Dissipation Pd: 79W
• Operating Temperature Range: -65°C To +165°C
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 40V
• Output Power (max): 25W(Min)
• Power Gain (typ)@vds: 14dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5S
• Input Capacitance (typ)@vds: 86@12.5VpF
• Output Capacitance (typ)@vds: 60@12.5VpF
• Reverse Capacitance (typ): 6.5@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 79000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5302-5

Circuit layout
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Circuit layout
Figure 21. 500 MHz test circuit
Figure 22. 500 MHz test circuit photomaster
Doc ID 12330 Rev 2
PD55025-E, PD55025S-E