PD57070-E STMicroelectronics, PD57070-E Datasheet - Page 9

• Manufacturer Part Number: PD57070-E
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD57070-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 14.7dB
• Voltage - Rated: 65V
• Current Rating: 7A
• Current - Test: 250mA
• Voltage - Test: 28V
• Power - Output: 70W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 65V
• Output Power (max): 70W(Min)
• Power Gain (typ)@vds: 14.7dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 3
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 91@28VpF
• Output Capacitance (typ)@vds: 58@28VpF
• Reverse Capacitance (typ): 3.8@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 50%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 95000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-6721-5; PD57070-E

PD57070-E, PD57070S-E
5
Note:
1
2
3
Test circuit
Figure 15. Test circuit schematic
Dimensions at component symbols are reference for component placement.
Gap between ground & transmission line = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] typ.
Dimensions of input and output component from edge of transmission lines.
Doc ID 12528 Rev 2
DIM
G
M
A
B
C
D
E
H
K
N
P
R
S
F
L
J
0.076 1.93
0.925 23.50
0.116 2.95
0.570 14.48
0.100 2.54
0.609 15.47
0.544 13.82
0.667 16.94
0.616 15.65
0.316 18.03
0.396 10.06
0.120 3.05
1.610 40.89
0.076 1.93
0.925 23.50
0.076 1.93
IN
Test circuit
MM
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