MRFE6S9045NR1 Freescale Semiconductor, MRFE6S9045NR1 Datasheet - Page 2

• Manufacturer Part Number: MRFE6S9045NR1
• Description: MOSFET RF N-CH 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6S9045NR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 22.1dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 350mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Drain Source Voltage Vds: 66V
• Rf Transistor Case: TO-270
• Termination Type: SMD
• Output Power Pout: 10W
• Peak Reflow Compatible (260 C): Yes
• Transistor Polarity: N Channel
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 66V
• Output Power (max): 10W
• Power Gain (typ)@vds: 22.1/20/20dB
• Frequency (max): 1GHz
• Package Type: TO-270
• Pin Count: 3
• Input Capacitance (typ)@vds: 81@28VpF
• Output Capacitance (typ)@vds: 27@28VpF
• Reverse Capacitance (typ): 1.02@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA/CW/GSM EDGE
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Filter Terminals: SMD
• Gate-source Voltage: 12V
• Leaded Process Compatible: Yes
• Operating Frequency Max: 880MHz
• Lead Free Status / RoHS Status: Contains lead / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MRFE6S9045NR1; MRFE6S9045NR1TR

MRFE6S9045NR1
2
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
DS
DS
DS
= 66 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
= 5 Vdc, V
= 28 Vdc, I
= 10 Vdc, I
DS
D
D
D
GS
GS
GS
= 200 μA)
= 350 mAdc, Measured in Functional Test)
= 1.0 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Test Methodology
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
Rating
V
V
ACPR
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
G
IRL
DSS
DSS
GSS
η
= 350 mA, P
3
oss
rss
iss
ps
D
0.05
30.5
Min
Package Peak Temperature
out
2.3
—
—
—
—
—
—
21
—
—
1
= 10 W Avg., f = 880 MHz, Single - Carrier
0.23
1.02
22.1
260
Typ
- 46
- 19
3.1
27
81
32
—
—
—
2
3A (Minimum)
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
- 44
3.8
0.3
10
10
25
—
—
—
—
- 9
1
3
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
°C
pF
pF
pF
%