TRANS RF N-CH HF/VHF/UHF M113

 

SD2900

Manufacturer Part NumberSD2900
DescriptionTRANS RF N-CH HF/VHF/UHF M113
ManufacturerSTMicroelectronics
SD2900 datasheets

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Specifications of SD2900

Transistor TypeN-ChannelFrequency400MHz
Gain16dBVoltage - Rated65V
Current Rating900mACurrent - Test50mA
Voltage - Test28VPower - Output5W
Package / CaseM113Lead Free Status / RoHS StatusLead free / RoHS Compliant
Noise Figure-Other names497-5462
SD2900
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GOLD METALLIZATION
COMMON SOURCE CONFIGURATION
2 - 500 MHz
5 WATTS
28 VOLTS
13.5 dB MIN. AT 400 MHz
CLASS A OR AB OPERATION
EXCELLENT THERMAL STABILITY
DESCRIPTION
The SD2900 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz
ABSOLUTE MAXIMUM RATINGS (T
Symbol
Parameter
V
Drain Source Voltage
(BR)DSS
V
Drain-Gate Voltage (R
DGR
V
Gate-Source Voltage
GS
I
Drain Current
D
P
Power Dissipation
DISS
T
Max. Operating Junction Temperature
j
T
Storage Temperature
STG
THERMAL DATA
R
Junction-Case Thermal Resistance
th(j-c)
R
Case-Heatsink Thermal Resistance
th(c-s)
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
ORDER CODE
o
= 25
C)
case
= 1M )
GS
SD2900
M113
epoxy sealed
BRANDING
SD2900
SD2900
PIN CONNECTION
1. Drain
3.Gate
2. Source
4. Source
Value
65
65
20
900
21.9
200
-65 to 150
8.0
0.30
Unit
V
V
V
mA
W
o
C
o
C
o
C/W
o
C/W
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SD2900 Summary of contents

  • Page 1

    ... COMMON SOURCE CONFIGURATION 2 - 500 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS field-effect RF power transistor intended for use large signal applications up to 500 MHz ABSOLUTE MAXIMUM RATINGS (T Symbol Parameter V ...

  • Page 2

    ... SD2900 ELECTRICAL SPECIFICATION (T STATIC Symbol (BR)DSS DSS 20V GSS 10V GS( 10V DS(ON 10V ISS OSS RSS GS DYNAMIC Symbol 400 MHz V OUT 400 MHz 400 MHz Load f = 400 MHz V DD Mismatch All Angles IMPEDANCE DATA FREQ. 400 MHz 2 case Parameter 0 0 MHz ...

  • Page 3

    ... VGS, GATE-SOURCE VOLTAGE (VOLTS) Maximum Thermal Resistance vs Case Temperature GC83130 10 9.5 9 Ciss 8.5 Coss 8 Crss 7 Gate-Source Voltages vs Case Temperature GC83150 1. -20°C 1. 25° 80°C 0.98 0.96 0.94 - Tc, CASE TEMPERATURE (º VDD = Tc, CASE TEMPERATURE (ºC) SD2900 GC83140 85 GC83160 100 3/8 ...

  • Page 4

    ... SD2900 TYPICAL PERFORMANCE Output Power vs Input Power 8 6 Tc= 25° 400 MHz IDQ = 130 Pin, INPUT POWER (mW) Output Power vs Voltage Supply 8 6 IDQ = 400 MHz VDD, SUPPLY VOLTAGE (VOLTS) Power Gain vs Output Power 25° 400 MHz IDQ = Pout, OUTPUT POWER (W) 4/8 ...

  • Page 5

    ... MHz Test Circuit Schematic 400 MHz Test Circuit Component Part List SD2900 5/8 ...

  • Page 6

    ... SD2900 400 MHz Test Circuit Photomaster Production Test Fixture 6/8 REF. 1021498C ...

  • Page 7

    ... Controlling Dimension: Inches mm MAX. MIN. 5.84 0.220 20.83 0.780 18.54 0.720 24.89 0.970 9.78 0.370 0.15 0.004 2.67 0.085 4.57 0.160 7.14 6.48 0.245 3.30 0.120 SD2900 inch TYP. MAX. 0.230 0.820 0.730 0.980 0.385 0.006 0.105 0.180 0.281 0.255 0.130 1010936D 7/8 ...

  • Page 8

    ... SD2900 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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