SD57030-01 STMicroelectronics, SD57030-01 Datasheet
SD57030-01
Specifications of SD57030-01
SD57030-01
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SD57030-01 Summary of contents
Page 1
... The SD57030- common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed for high gain and broadband performance operating in common source mode ideal for base station applications requiring high linearity. ...
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... SD57030-01 ELECTRICAL SPECIFICATION (T STATIC Symbol (BR)DSS DSS GSS GS( DS(ON ISS OSS RSS GS DYNAMIC Symbol OUT Load DD DQ mismatch ALL PHASE ANGLES 2 ° CASE Test Conditions MHz MHz MHz DS Test Conditions f = 945 MHz 945 MHz OUT 945 MHz OUT 945 MHz OUT Min ...
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... Vgs, GATE-SOURCE VOLTAGE (V) Power Gain and Efficiency vs. Output Power 945 MHz Vdd Idq 1.2 1.4 Output Power vs. Supply Voltage 35 f= 945 MHz 30 Idq SD57030-01 Gain f= 945 MHz Vdd Idq Pout, OUTPUT POWER (W) Pin= .84 W Pin= .47 W Pin= . VDD, SUPPLY VOLTAGE ( Eff ...
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... SD57030-01 TEST CIRCUIT SCHEMATIC NOTES: 1. DIMENSIONS AT COMPONENT SYMBOLS ARE REFERENCE FOR COMPONENT PLACEMENT. 2. GAP BETWEEN GROUND & TRANSMISSION LINE = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] TYP. 3. DIMENSIONS OF INPUT AND OUTPUT COMPONENT FROM EDGE OF TRANSMISSION LINES. TEST CIRCUIT COMPONENT PART LIST COMPONENT ...
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... TEST CIRCUIT SD57030-01 TEST CIRCUIT PHOTOMASTER SD57030-01 6.4 inches SD57030-01 5/7 ...
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... SD57030-01 M250 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA DIM. MIN. A 5.21 B 2.16 C 5.59 D 8.89 E 9.40 F 0.11 G 0.89 H 1.45 I 2.67 Controlling dimension: Inches 6/7 mm TYP. MAX 5.71 0.205 2.92 0.085 6.09 0.220 9.40 0.350 9.91 0.370 0.15 0.004 1.14 0.035 1.70 0.057 3 ...
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