MRF6V4300NBR5 Freescale Semiconductor, MRF6V4300NBR5 Datasheet

no-image

MRF6V4300NBR5

Manufacturer Part Number
MRF6V4300NBR5
Description
MOSFET RF N-CH 50V TO-272-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6V4300NBR5

Transistor Type
N-Channel
Frequency
450MHz
Gain
22dB
Voltage - Rated
110V
Current Rating
2.5mA
Current - Test
900mA
Voltage - Test
50V
Power - Output
300W
Package / Case
TO-272-4
Drain Source Voltage Vds
110V
Rf Transistor Case
TO-272
Transistor Polarity
N Channel
Filter Terminals
SMD
Operating Frequency Max
450MHz
Output Power Pout
300W
Gate-source Voltage
10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MRF6V4300NBR5TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6V4300NBR5
Manufacturer:
FREESCALE
Quantity:
101
Part Number:
MRF6V4300NBR5
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF6V4300NBR5
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance: V
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed primarily for CW large--signal output and driver applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
f = 450 MHz
Output Power
Operation
Power Gain — 22 dB
Drain Efficiency — 60%
MTTF calculators by product.
DD
(1,2)
= 50 Volts, I
Rating
DD
Operation
DQ
= 900 mA, P
out
= 300 Watts,
Symbol
V
V
T
T
DSS
T
GS
stg
C
J
CASE 1486- -03, STYLE 1
Note: Exposed backside of the package is
RF
RF
Document Number: MRF6V4300N
in
in
MRF6V4300NBR1
/V
/V
MRF6V4300NR1
MRF6V4300NR1 MRF6V4300NBR1
MRF6V4300NR1
TO- -270 WB- -4
Figure 1. Pin Connections
GS
GS
PARTS ARE SINGLE- -ENDED
10- -600 MHz, 300 W, 50 V
the source terminal for the transistor.
LATERAL N- -CHANNEL
PLASTIC
RF POWER MOSFETs
SINGLE- -ENDED
-- 65 to +150
BROADBAND
--0.5, +110
--6.0, +10
Value
CASE 1484- -04, STYLE 1
(Top View)
150
225
MRF6V4300NBR1
TO- -272 WB- -4
PLASTIC
Rev. 3, 4/2010
RF
RF
out
out
Unit
Vdc
Vdc
°C
°C
°C
/V
/V
DS
DS
1

Related parts for MRF6V4300NBR5

MRF6V4300NBR5 Summary of contents

Page 1

... Operating Junction Temperature 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008--2010. All rights reserved. RF Device Data Freescale Semiconductor = 900 mA 300 Watts, ...

Page 2

... Vdc — — 50 μAdc — — 2.5 mA 0.9 1.65 2.4 Vdc 1.9 2.7 3.4 Vdc — 0.25 — Vdc — 2.8 — pF — 105 — pF — 304 — 300 450 MHz, CW out — % — --16 -- Device Data Freescale Semiconductor ...

Page 3

... C19, C20 5.6 pF, Chip Capacitors C21, C22, C23, C24 4.3 pF, Chip Capacitors C25, C26, C27, C28 4.7 pF, Chip Capacitors Inductor L2 Inductors L4 Turn, #18 AWG Inductors, Hand Wound R1 10 Ω, 1/4 W, Chip Resistor RF Device Data Freescale Semiconductor L2 C9 C13 Z10 C20 Z5 Z6 C19 DUT ...

Page 4

... C11 C16 C17 Figure 3. MRF6V4300NR1(NBR1) Test Circuit Component Layout MRF6V4300NR1 MRF6V4300NBR1 C12 C18 L3 C10 C13 C15 C20 C21 C22 C25 C26 C19 C23 C24 C27 C28 C14 MRF6V4300N/NB Rev Device Data Freescale Semiconductor ...

Page 5

... I = 450 mA DQ --30 --35 650 mA --40 900 mA --45 1350 mA --50 --55 1125 mA --60 10 100 P , OUTPUT POWER (WATTS) PEP out Figure 8. Third Order Intermodulation Distortion versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 100 2.75 V 900 mA 2. 450 100 120 10 Figure 7 ...

Page 6

... Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature T = --30_C C 25_C 85_C Vdc 900 450 MHz INPUT POWER (dBm) in 110 130 150 170 190 210 230 T , JUNCTION TEMPERATURE (° Vdc 300 W, and η = 60%. DD out D RF Device Data Freescale Semiconductor 40 250 ...

Page 7

... Figure 14. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor f = 450 MHz Z source f = 450 MHz Z load Vdc 900 mA 300 out f Z source MHz Ω 450 0.39 + j1.26 1.27 + j0. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground ...

Page 8

... MRF6V4300NR1 MRF6V4300NBR1 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 9 ...

Page 10

... MRF6V4300NR1 MRF6V4300NBR1 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 11 ...

Page 12

... MRF6V4300NR1 MRF6V4300NBR1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 13 ...

Page 14

... Capable Plastic Package bullet • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software MRF6V4300NR1 MRF6V4300NBR1 14 REVISION HISTORY Description , “0.40 + j5.93” to “0.39 + j1.26” and Z source , “1.42 + j5.5” to “1.27 + j0.96” in Fig. 14, Series load RF Device Data Freescale Semiconductor ...

Page 15

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

Related keywords