MRF6V4300NBR5 Freescale Semiconductor, MRF6V4300NBR5 Datasheet - Page 2

• Manufacturer Part Number: MRF6V4300NBR5
• Description: MOSFET RF N-CH 50V TO-272-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V4300NBR5

• Transistor Type: N-Channel
• Frequency: 450MHz
• Gain: 22dB
• Voltage - Rated: 110V
• Current Rating: 2.5mA
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: TO-272-4
• Drain Source Voltage Vds: 110V
• Rf Transistor Case: TO-272
• Transistor Polarity: N Channel
• Filter Terminals: SMD
• Operating Frequency Max: 450MHz
• Output Power Pout: 300W
• Gate-source Voltage: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MRF6V4300NBR5TR

2
MRF6V4300NR1 MRF6V4300NBR1
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Thermal Resistance, Junction to Case
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Per JESD22--A113, IPC/JEDEC J--STD--020
Gate--Source Leakage Current
Drain--Source Breakdown Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Case Temperature 83°C, 300 W CW
(V
(I
(V
(V
(V
(V
(V
(V
(V
(V
D
calculators by product.
Select Documentation/Application Notes -- AN1955.
GS
DS
DS
DS
DD
GS
DS
DS
DS
= 150 mA, V
= 5 Vdc, V
= 50 Vdc, V
= 100 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
GS
DS
D
D
D
GS
GS
= 800 μAdc)
= 900 mAdc, Measured in Functional Test)
= 2 Adc)
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
= 0 Vdc)
Test Methodology
ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
Characteristic
Test Methodology
Characteristic
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 50 Vdc, I
DQ
V
Symbol
V
Rating
V
V
(BR)DSS
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
G
= 900 mA, P
IRL
GSS
DSS
DSS
η
3
oss
rss
iss
ps
D
Symbol
out
R
Min
110
Package Peak Temperature
0.9
1.9
20
58
—
—
—
—
—
—
—
—
θJC
= 300 W, f = 450 MHz, CW
1.65
0.25
260
Typ
105
304
--16
2.7
2.8
22
60
—
—
—
—
1C (Minimum)
IV (Minimum)
A (Minimum)
Value
Class
Freescale Semiconductor
0.24
(1,2)
Max
2.5
2.4
3.4
10
50
24
—
—
—
—
—
—
--9
RF Device Data
°C/W
μAdc
μAdc
Unit
Unit
Unit
Vdc
Vdc
Vdc
Vdc
mA
dB
dB
°C
pF
pF
pF
%