MRFG35010ANR5 Freescale Semiconductor, MRFG35010ANR5 Datasheet

TRANS RF 10W 12V PWR FET NI360HF

MRFG35010ANR5

Manufacturer Part Number
MRFG35010ANR5
Description
TRANS RF 10W 12V PWR FET NI360HF
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFG35010ANR5

Transistor Type
pHEMT FET
Frequency
3.55GHz
Gain
10dB
Voltage - Rated
15V
Current Rating
2.9A
Current - Test
140mA
Voltage - Test
12V
Power - Output
10W
Package / Case
NI-360HF
Lead Free Status / RoHS Status
Contains lead / RoHS Compliant
Noise Figure
-
Other names
MRFG35010ANR5TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRFG35010ANR5
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for
use in Class AB or Class A linear base station applications.
• Typical Single - Carrier W - CDMA Performance: V
• 10 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Drain - Source Voltage
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Designed for WiMAX, WLL/MMDS or UMTS driver and final applications.
140 mA, P
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Case Temperature 81°C, 10 W CW
Case Temperature 79°C, 1 W CW
Select Documentation/Application Notes - AN1955.
Power Gain —10 dB
Drain Efficiency — 25%
ACPR @ 5 MHz Offset — - 43 dBc in 3.84 MHz Channel Bandwidth
out
= 1 Watt Avg., f = 3550 MHz, Channel Bandwidth =
(1)
Test Methodology
Characteristic
Rating
Class AB
Class A
DD
= 12 Volts, I
DQ
=
Symbol
Symbol
V
R
V
T
P
T
DSS
θJC
GS
stg
ch
in
Document Number: MRFG35010A
MRFG35010AR1
CASE 360D - 02, STYLE 1
3.5 GHz, 10 W, 12 V
1C (Minimum)
III (Minimum)
A (Minimum)
- 65 to +150
Value
GaAs PHEMT
POWER FET
Value
Class
175
4.0
4.1
NI - 360HF
15
33
- 5
(1, 2)
Rev. 2, 12/2008
MRFG35010AR1
°C/W
Unit
dBm
Unit
Vdc
Vdc
°C
°C
1

Related parts for MRFG35010ANR5

MRFG35010ANR5 Summary of contents

Page 1

... For reliable operation, the operating channel temperature should not exceed 150°C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRFG35010A ...

Page 2

... Typ Max — 2.9 — — < 1 100 μAdc — 0.09 1 mAdc — mAdc - 1.2 - 0.8 - 0.7 - 1.2 - 0 Avg 3550 MHz, out 9 10 — — — 140 mA 3550 MHz — 10 — RF Device Data Freescale Semiconductor Unit Adc Vdc Vdc dB % dBc W ...

Page 3

... Chip Capacitors C3, C15 100 pF Chip Capacitors C4, C13, C14 100 pF Chip Capacitors C5, C12 1000 pF Chip Capacitors C6, C11 0.1 μF Chip Capacitors C7, C10 39K Chip Capacitors C8 μ Chip Capacitors R1 Ω Chip Resistors RF Device Data Freescale Semiconductor R2 C13 C4 C14 C3 C15 C2 C16 Z12 Z9, Z10 ...

Page 4

... Figure 2. 3.5 GHz Test Circuit Component Layout MRFG35010AR1 4 C13 C12 C11 C10 C14 C15 C16 C17 MRFG35010, Rev Device Data Freescale Semiconductor ...

Page 5

... NOTE: All data is referenced to package lead interface. Γ All data is generated from load pull, not from the test circuit shown. RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Vdc 140 mA 3550 MHz DS DQ Single−Carrier W−CDMA 3.84 MHz Channel Bandwidth Γ ...

Page 6

... OUTPUT POWER (dBm) out and Drain Efficiency versus Output Power = 12 Vdc 140 mA 3550 MHz DS DQ IRL ACPR OUTPUT POWER (dBm) out Figure 6. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power −10 −15 −20 −25 − Device Data Freescale Semiconductor ...

Page 7

... Figure 7. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor load f = 3550 MHz Z source f = 3550 MHz Vdc 140 mA Avg out source load MHz W W 3550 4.6 - j18.7 4 Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground ...

Page 8

... RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor ( Vdc 1000 mA ∠ φ 1.305 27.2 0.0250 1.296 25.8 0.0258 1.287 24.4 0.0264 1 ...

Page 10

... RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor ( Vdc 1000 mA ∠ φ 0.752 108.7 0.1006 0.704 105.4 0.0959 0.660 102.3 0.0915 ...

Page 12

... RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor ( Vdc 140 mA ∠ φ 1.151 24.7 0.0256 1.141 23.3 0.0262 1.132 21.9 ...

Page 14

... RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor ( Vdc 140 mA ∠ φ 0.684 105.6 0.0930 0.638 102.3 0.0882 0.598 99.2 ...

Page 16

... M .355 .365 9.02 9. .355 .365 9.96 10.16 Q .125 .135 3.18 3.43 R .225 .235 5.72 5.97 S .225 .235 5.72 5.97 aaa .005 0.13 bbb .010 0.25 ccc .015 0.38 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE RF Device Data Freescale Semiconductor ...

Page 17

... Removed ”Operating Case Temperature Range” from Maximum Ratings table so that the maximum channel temperature rating is the limiting thermal design criteria and not the case temperature range • Added Table 3, ESD Protection Characteristics renumbered subsequent tables RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description ...

Page 18

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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