MRFG35010NR5 Freescale Semiconductor, MRFG35010NR5 Datasheet - Page 5

• Manufacturer Part Number: MRFG35010NR5
• Description: TRANSISTOR RF 9W 12V POWER FET
• Manufacturer: Freescale Semiconductor

Specifications of MRFG35010NR5

• Transistor Type: pHEMT FET
• Frequency: 3.55GHz
• Gain: 10dB
• Voltage - Rated: 15V
• Current Rating: 2.9A
• Current - Test: 180mA
• Voltage - Test: 12V
• Power - Output: 9W
• Package / Case: PLD-1.5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: MRFG35010NR5TR

RF Device Data
Freescale Semiconductor
NOTE: All data is referenced to package lead interface. Γ
All data is generated from load pull, not from the test circuit shown.
−10
−20
−30
−40
−50
−60
12.5
10.5
11.5
9.5
12
10
11
0
0.1
0.1
Figure 4. Transducer Gain and Power Added
Figure 3. W - CDMA ACPR and Input Return
V
f = 3.55 GHz, 8.66 P/A 3GPP W−CDMA
Γ
IRL
ACPR
DS
S
G
= 0.898é−134.03_, Γ
= 12 Vdc, I
T
TYPICAL CHARACTERISTICS
Efficiency versus Output Power
V
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
Γ
Loss versus Output Power
DS
S
P
= 0.898é−134.03_, Γ
P
DQ
out
= 12 Vdc, I
out
, OUTPUT POWER (WATTS)
= 180 mA
, OUTPUT POWER (WATTS)
L
DQ
= 0.828é−140.67_
= 180 mA
1
1
PAE
S
L
and Γ
= 0.828é−140.67_
L
are the impedances presented to the DUT.
10
10
0
−10
−20
−30
−40
−50
−60
60
50
40
30
20
10
0
MRFG35010NT1
5