BF861C,215 NXP Semiconductors, BF861C,215 Datasheet - Page 3

MOSFET N-CH 25V 10MA SOT23

BF861C,215

Manufacturer Part Number
BF861C,215
Description
MOSFET N-CH 25V 10MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF861C,215

Package / Case
SST3 (SOT-23-3)
Current Rating
25mA
Transistor Type
N-Channel JFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / Rohs Status
Compliant
Other names
934034400215::BF861C T/R::BF861C T/R
Philips Semiconductors
6. Thermal characteristics
7. Characteristics
9397 750 13395
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6:
[1]
Table 7:
T
Symbol
P
T
T
Symbol
R
Symbol
V
j
Fig 1. Power derating curve.
stg
j
tot
(BR)GSS
th(j-a)
= 25 C; V
Device mounted on an FR4 printed-circuit board.
Device mounted on an FR4 printed-circuit board.
Limiting values
Thermal characteristics
Characteristics
DS
Parameter
total power dissipation
storage temperature
operating junction
temperature
Parameter
thermal resistance from junction
to ambient
Parameter
gate-source
breakdown voltage
= 8 V; V
Rev. 04 — 24 September 2004
(mW)
GS
P
tot
300
200
100
= 0 V unless otherwise specified.
0
…continued
0
BF861A; BF861B; BF861C
Conditions
I
G
= 1 A
50
Conditions
up to T
Conditions
amb
100
= 25 C
T
amb
( C)
mrc166
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
Min
150
25
Min
-
-
N-channel junction FETs
65
[1]
Typ
-
Typ
500
Max
250
+150
150
Max
-
Unit
K/W
Unit
mW
Unit
V
C
C
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