BF861A,215 NXP Semiconductors, BF861A,215 Datasheet - Page 6

• Manufacturer Part Number: BF861A,215
• Description: MOSFET N-CH 25V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF861A,215

• Package / Case: SST3 (SOT-23-3)
• Transistor Type: N-Channel JFET
• Voltage - Rated: 25V
• Current Rating: 6.5mA
• Configuration: Single
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Cutoff Voltage: - 0.2 V to - 1 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: 25 V
• Drain Current (idss At Vgs=0): 2 mA to 6.5 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934034340215; BF861A T/R; BF861A T/R

Philips Semiconductors
9397 750 13395
Product data sheet
Fig 6. Typical input characteristics; BF861A.
Fig 8. Typical input characteristics; BF861B.
(mA)
(mA)
I
I
D
D
10
5
4
3
2
1
0
8
6
4
2
0
V
V
DS
DS
1
1
= 8 V.
= 8 V.
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
V
V
GS
GS
mbd465
mbd467
(V)
(V)
Rev. 04 — 24 September 2004
0
0
BF861A; BF861B; BF861C
Fig 7. Typical output characteristics: BF861A.
Fig 9. Typical output characteristics; BF861B.
(mA)
(mA)
(1) V
(2) V
(3) V
(4) V
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
I
I
D
D
10
5
4
3
2
1
0
8
6
4
2
0
V
V
0
0
DS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
= 8 V.
= 8 V.
= 0 V.
= 100 mV.
= 200 mV.
= 300 mV.
= 0 V.
= 100 mV.
= 200 mV.
= 300 mV.
= 400 mV.
= 500 mV.
2
2
4
4
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
N-channel junction FETs
6
6
8
8
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
(5)
(6)
V
V
DS
DS
mbd466
mbd468
(V)
(V)
10
10
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