BF513,215 NXP Semiconductors, BF513,215 Datasheet

MOSFET N-CH 20V 10MA SOT23

BF513,215

Manufacturer Part Number
BF513,215
Description
MOSFET N-CH 20V 10MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF513,215

Package / Case
SST3 (SOT-23-3)
Transistor Type
N-Channel JFET
Frequency
100MHz
Voltage - Rated
20V
Current Rating
30mA
Noise Figure
1.5dB
Current - Test
5mA
Voltage - Test
10V
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
20 V
Gate-source Cutoff Voltage
3 V
Gate-source Breakdown Voltage
20 V
Maximum Drain Gate Voltage
20 V
Continuous Drain Current
30 mA
Drain Current (idss At Vgs=0)
10 mA to 18 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933505300215
BF513 T/R
BF513 T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
BF510 to 513
N-channel silicon field-effect
transistors
Product specification
December 1997

Related parts for BF513,215

BF513,215 Summary of contents

Page 1

DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification DISCRETE SEMICONDUCTORS December 1997 ...

Page 2

... NXP Semiconductors N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r ...

Page 3

... NXP Semiconductors N-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage (open source) Drain current (DC or average) Gate current Total power dissipation amb Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note 1. Mounted on a ceramic substrate  ...

Page 4

... NXP Semiconductors N-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS Measuring conditions (common source): y-parameters (common source) Input capacitance MHz Input conductance 100 MHz Feedback capacitance MHz Transfer admittance kHz instead Transfer admittance 100 MHz Output capacitance MHz Output conductance MHz Output conductance 100 MHz Noise figure at optimum source admittance = 1 mS ...

Page 5

... NXP Semiconductors N-channel silicon field-effect transistors 300 handbook, halfpage P tot (mW) 200 100 Fig.4 Power derating curve. December 1997 MDA245 120 160 200 T amb (°C) 5 Product specification BF510 to 513 ...

Page 6

... NXP Semiconductors N-channel silicon field-effect transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 December 1997 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 7

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 8

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 9

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

Related keywords