BLF3G22-30,112 NXP Semiconductors, BLF3G22-30,112 Datasheet - Page 7

TRANSISTOR UHF PWR LDMOS SOT608

BLF3G22-30,112

Manufacturer Part Number
BLF3G22-30,112
Description
TRANSISTOR UHF PWR LDMOS SOT608
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF3G22-30,112

Transistor Type
LDMOS
Frequency
2.17GHz
Gain
14dB
Voltage - Rated
65V
Current Rating
12A
Current - Test
450mA
Voltage - Test
28V
Power - Output
30W
Package / Case
SOT-608A
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
4.5A
Drain Source Voltage (max)
65V
Output Power (max)
6W(Typ)
Power Gain (typ)@vds
14@28V/15@28VdB
Frequency (min)
2GHz
Frequency (max)
2.2GHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
3S
Drain Source Resistance (max)
300(Typ)mohm
Reverse Capacitance (typ)
1.7@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
24%
Mounting
Screw
Mode Of Operation
2-Tone CW/2-Tone W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934057338112
NXP Semiconductors
8. Test information
BLF3G22-30_1
Product data sheet
Fig 9. Class-AB test circuit
input
50
V
Gate
L2
R1
C8
C3
C4
C7
C1
C6
L6
L3
C5
L4 L5
C2
Rev. 01 — 21 June 2007
L7
L8
L11
L12
C9
L9
C10
C13
C16
C11
C12
UHF power LDMOS transistor
C17
C18
L10
BLF3G22-30
C14
C15
L1
output
50
© NXP B.V. 2007. All rights reserved.
C19
mld944
C20
V
DD
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