BLF6G27LS-100,112 NXP Semiconductors, BLF6G27LS-100,112 Datasheet - Page 5

• Manufacturer Part Number: BLF6G27LS-100,112
• Description: TRANSISTOR PWR LDMOS SOT502
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27LS-100,112

• Transistor Type: LDMOS
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 29A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 14W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064318112

NXP Semiconductors
BLF6G27-100_BLF6G27LS-100
Product data sheet
Fig 1.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
19
18
17
16
15
14
1
V
with 64 DPCH and 100 % clipping; PAR = 9.65 dB at
0.01 % probability; channel bandwidth = 3.84 MHz.
Power gain and drain efficiency as a function
of average output power; typical values
DS
= 28 V; I
G
η
7.2 Single carrier W-CDMA performance
D
p
Dq
= 900 mA; single carrier W-CDMA TM1
10
(2)
(3)
(1)
P
L(AV)
(W)
All information provided in this document is subject to legal disclaimers.
(1)
(2)
(3)
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BLF6G27-100; BLF6G27LS-100
2
Rev. 02 — 8 July 2010
50
40
30
20
10
0
(%)
η
D
Fig 2.
ACPR
(dBc)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−20
−30
−40
−50
−60
−70
1
V
with 64 DPCH and 100 % clipping; PAR = 9.65 dB at
0.01 % probability; channel bandwidth = 3.84 MHz.
ACPR at 5 MHz and at 10 MHz as a function of
average output power; typical values
DS
= 28 V; I
ACPR
ACPR
10M
5M
Dq
WiMAX power LDMOS transistor
= 900 mA; single carrier W-CDMA TM1
10
(3)
(2)
(1)
(3)
(2)
(1)
P
L(AV)
© NXP B.V. 2010. All rights reserved.
(W)
001aal780
10
2
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