BLD6G22L-50,112 NXP Semiconductors, BLD6G22L-50,112 Datasheet - Page 15

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BLD6G22L-50,112

Manufacturer Part Number
BLD6G22L-50,112
Description
TRANS DOHERTY W/CDMA SOT1130A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLD6G22L-50,112

Transistor Type
LDMOS
Frequency
2.11GHz ~ 2.17GHz
Gain
13.3dB
Voltage - Rated
65V
Current Rating
10.2A
Current - Test
170mA
Voltage - Test
28V
Power - Output
8W
Package / Case
SOT1130A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063511112
NXP Semiconductors
15. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
8
8.1
8.2
8.3
8.3.1
8.3.2
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Ruggedness in Doherty operation . . . . . . . . . . 4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Impedance information . . . . . . . . . . . . . . . . . . . 4
Performance curves . . . . . . . . . . . . . . . . . . . . . 5
CW pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
W-CDMA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
BLD6G22L-50; BLD6G22LS-50
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document identifier: BLD6G22L-50_BLD6G22LS-50
Date of release: 17 August 2010
All rights reserved.

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