BLS6G2731-6G,112 NXP Semiconductors, BLS6G2731-6G,112 Datasheet
BLS6G2731-6G,112
Specifications of BLS6G2731-6G,112
Related parts for BLS6G2731-6G,112
BLS6G2731-6G,112 Summary of contents
Page 1
... BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...
Page 2
... NXP Semiconductors 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLS6G2731- Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-case) BLS6G2731-6G_1 Product data sheet Pinning Description drain ...
Page 3
... V V gate leakage current V forward transconductance V drain-source on-state V resistance I Application information = 100 performance Parameter supply voltage power gain drain efficiency rise time fall time Rev. 01 — 19 February 2009 BLS6G2731-6G LDMOS S-Band radar power transistor Min = 0. 1 3.75 V; 2.7 ...
Page 4
... NXP Semiconductors Table 8. f GHz 2.7 2.8 2.9 3.0 3.1 Fig 1. 7.1 Ruggedness in class-AB operation The BLS6G2731-6G is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLS6G2731-6G_1 Product data sheet Typical impedance Z S 2.44 j17.78 2.99 j16.04 3 ...
Page 5
... Product data sheet 001aaj447 (dB) ( 300 Fig 3. Power gain as a function of load power; typical 001aaj449 (1) (%) ( 300 Fig 5. Drain efficiency as a function of load power; Rev. 01 — 19 February 2009 BLS6G2731-6G LDMOS S-Band radar power transistor ( mA 100 ( 2.7 GHz ( 2.9 GHz ( 3.1 GHz values 70 D ...
Page 6
... GHz ( 2.9 GHz ( 3.1 GHz Fig 7. Load power as a function of input power; 001aaj453 (%) (dB 3050 3150 f (MHz) = 300 Fig 9. Power gain and drain efficiency as function of Rev. 01 — 19 February 2009 BLS6G2731-6G LDMOS S-Band radar power transistor 0.1 0.2 0.3 0 100 s; ...
Page 7
... SMD resistor R2 SMD resistor L1, L2, L3 copper (Cu) strips BLS6G2731-6G_1 Product data sheet Figure 10) Value 3.9 - Rev. 01 — 19 February 2009 BLS6G2731-6G LDMOS S-Band radar power transistor C10 6.15 and thickness = 0.64 mm 6.15 and thickness = 0.64 mm. r Remarks ATC 200B or equivalent ATC 100B or equivalent ...
Page 8
... REFERENCES JEDEC JEITA Rev. 01 — 19 February 2009 BLS6G2731-6G LDMOS S-Band radar power transistor 1.02 +0.05 6.43 6.43 7 0.51 0.51 6 ...
Page 9
... Laterally Diffused Metal-Oxide Semiconductor Radio Frequency Short wave Band Surface Mounted Device Voltage Standing-Wave Ratio Release date Data sheet status 20090219 Product data sheet Rev. 01 — 19 February 2009 BLS6G2731-6G LDMOS S-Band radar power transistor Change notice Supersedes - - © NXP B.V. 2009. All rights reserved ...
Page 10
... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 19 February 2009 BLS6G2731-6G LDMOS S-Band radar power transistor © NXP B.V. 2009. All rights reserved ...
Page 11
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLS6G2731-6G_1 All rights reserved. Date of release: 19 February 2009 ...