BLF6G27LS-135,112 NXP Semiconductors, BLF6G27LS-135,112 Datasheet - Page 8

IC WIMAX 2.7GHZ SOT502B

BLF6G27LS-135,112

Manufacturer Part Number
BLF6G27LS-135,112
Description
IC WIMAX 2.7GHZ SOT502B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G27LS-135,112

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
2.5GHz
Gain
16dB
Voltage - Rated
65V
Current Rating
34A
Current - Test
1.2A
Voltage - Test
32V
Power - Output
20W
Minimum Operating Temperature
- 65 C
Mounting Style
Screw
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.135 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
34 A
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061172112
BLF6G27LS-135
BLF6G27LS-135
NXP Semiconductors
BLF6G27-135_BLF6G27LS-135_2
Product data sheet
Table 10.
f
(GHz)
2.5
2.6
2.7
Measured test circuit impedances
BLF6G27-135; BLF6G27LS-135
Rev. 02 — 26 May 2008
Z
( )
1.60 + j1.07
1.38 + j2.08
1.17 + j2.77
i
WiMAX power LDMOS transistor
Z
( )
1.44 + j1.86
1.17 + j2.80
0.97 + j3.41
o
© NXP B.V. 2008. All rights reserved.
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