BLF6G22-180PN,112 NXP Semiconductors, BLF6G22-180PN,112 Datasheet - Page 8

• Manufacturer Part Number: BLF6G22-180PN,112
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN,112

• Package / Case: SOT539A
• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 1.6A
• Voltage - Test: 32V
• Power - Output: 50W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061276112; BLF6G22-180PN; BLF6G22-180PN

NXP Semiconductors
9. Package outline
Fig 10. Package outline SOT539A
BLF6G22-180PN_2
Product data sheet
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT539A
H
0.210
0.156
5.33
3.96
A
U 2
A
11.81
11.56
0.465
0.455
A
L
b
0.006
0.003
0.15
0.08
c
31.55
30.94
1.242
1.218
IEC
D
31.52
30.96
1.241
1.219
D 1
3
1
13.72
0.540
e
JEDEC
0.374
0.366
9.50
9.30
E
U 1
H 1
D 1
D
q
e
REFERENCES
0.375
0.365
9.53
9.27
E 1
Rev. 02 — 23 April 2008
0.069
0.059
1.75
1.50
0
F
b
scale
17.12
16.10
0.674
0.634
EIAJ
2
4
H
5
25.53
25.27
1.005
0.995
10 mm
H 1
0.147
0.107
3.73
2.72
w 2
w 3
5
L
M
M
C
0.130
0.120
3.30
3.05
C
p
p
F
M
B
0.091
0.079
2.31
2.01
Q
w 1
BLF6G22-180PN
M
35.56
1.400
A
q
PROJECTION
EUROPEAN
M
41.28
41.02
1.625
1.615
B
U 1
M
Power LDMOS transistor
10.29
10.03
0.405
0.395
E 1
U 2
c
0.010 0.020
© NXP B.V. 2008. All rights reserved.
0.25
Q
w 1
ISSUE DATE
99-12-28
00-03-03
0.51
w 2
SOT539A
E
0.010
0.25
w 3
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