BLF548,112 NXP Semiconductors, BLF548,112 Datasheet

TRANSISTOR RF DMOS SOT262A2

BLF548,112

Manufacturer Part Number
BLF548,112
Description
TRANSISTOR RF DMOS SOT262A2
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF548,112

Package / Case
SOT-262A2
Transistor Type
2 N-Channel (Dual)
Frequency
500MHz
Gain
11dB
Voltage - Rated
65V
Current Rating
15A
Current - Test
160A
Voltage - Test
28V
Power - Output
150W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.3 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
330 W
Maximum Operating Temperature
+ 200 C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
150W
Power Gain (typ)@vds
11@28VdB
Frequency (max)
500MHz
Package Type
CDFM
Pin Count
5
Forward Transconductance (typ)
3.5S
Drain Source Resistance (max)
300@10Vmohm
Input Capacitance (typ)@vds
105@28VpF
Output Capacitance (typ)@vds
90@28VpF
Reverse Capacitance (typ)
25@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Screw
Mode Of Operation
CW Class-B
Number Of Elements
2
Power Dissipation (max)
330000mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2418
934006620112
BLF548
BLF548
Product specification
Supersedes data of Oct 1992
DATA SHEET
BLF548
UHF push-pull power MOS
transistor
M3D091
DISCRETE SEMICONDUCTORS
2003 Sep 26

Related parts for BLF548,112

BLF548,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF548 UHF push-pull power MOS transistor Product specification Supersedes data of Oct 1992 2003 Sep 26 ...

Page 2

Philips Semiconductors UHF push-pull power MOS transistor FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability Designed for broadband operation. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter ...

Page 3

Philips Semiconductors UHF push-pull power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER Per transistor section unless otherwise specified V drain-source voltage DS V gate-source voltage GS I drain current (DC ...

Page 4

Philips Semiconductors UHF push-pull power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER Per transistor section V drain-source breakdown voltage V (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold ...

Page 5

Philips Semiconductors UHF push-pull power MOS transistor 3 handbook, halfpage TC (mV/ Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; ...

Page 6

Philips Semiconductors UHF push-pull power MOS transistor 100 handbook, halfpage C rs (pF Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. APPLICATION INFORMATION FOR CLASS-B OPERATION T = ...

Page 7

Philips Semiconductors UHF push-pull power MOS transistor 20 handbook, halfpage G p (dB 100 Class-B operation 500 MHz; Z ...

Page 8

Philips Semiconductors UHF push-pull power MOS transistor V bias     input bias f = 500 MHz. List of components class-B test circuit (see Fig.11) COMPONENT C1, C2 multilayer ...

Page 9

Philips Semiconductors UHF push-pull power MOS transistor COMPONENT C13, C16 electrolytic capacitor C18 multilayer ceramic chip capacitor; note 2 C19 multilayer ceramic chip capacitor; note 2 C20 multilayer ceramic chip capacitor; note 2 C23, C24 multilayer ceramic chip capacitor; note ...

Page 10

Philips Semiconductors UHF push-pull power MOS transistor handbook, full pagewidth L1/ handbook, full pagewidth strap rivets strap The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being ...

Page 11

Philips Semiconductors UHF push-pull power MOS transistor 1 handbook, halfpage 150 250 350 Class-B operation 160 mA (per section ...

Page 12

Philips Semiconductors UHF push-pull power MOS transistor BLF548 scattering parameters mA; note (MHz 0.99 14.0 10 0.98 27.6 20 0.93 52.0 30 0.88 ...

Page 13

Philips Semiconductors UHF push-pull power MOS transistor PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 5.39 5.85 ...

Page 14

Philips Semiconductors UHF push-pull power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before ...

Page 15

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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