PD85006L-E STMicroelectronics, PD85006L-E Datasheet - Page 12

• Manufacturer Part Number: PD85006L-E
• Description: TRANS RF POWER LDMOST
• Manufacturer: STMicroelectronics

Specifications of PD85006L-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 2A
• Current - Test: 200mA
• Voltage - Test: 13.6V
• Power - Output: 5W
• Package / Case: PowerFLAT™ (5 x 5)
• Configuration: Quad Common Source
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: - 0.5 V, + 15 V
• Continuous Drain Current: 2 A
• Power Dissipation: 20.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-8292; 497-8292-2; 497-8292

Package mechanical data
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Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at:
www.st.com
PD85006L-E