PD57070S-E STMicroelectronics, PD57070S-E Datasheet - Page 8

• Manufacturer Part Number: PD57070S-E
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD57070S-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 14.7dB
• Voltage - Rated: 65V
• Current Rating: 7A
• Current - Test: 250mA
• Voltage - Test: 28V
• Power - Output: 70W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 65V
• Output Power (max): 70W(Min)
• Power Gain (typ)@vds: 14.7dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 91@28VpF
• Output Capacitance (typ)@vds: 58@28VpF
• Reverse Capacitance (typ): 3.8@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 50%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 95000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

Typical performance
8/22
Figure 11. Output power vs bias current
Figure 13. Output power vs supply voltage
100
80
60
40
20
80
70
60
50
40
30
20
10
0
0
0
12
14
500
16
18
1000
945 MHz
960 MHz
20
Idq (m A)
Vdd (V)
890,925 MHz
22
1500
890, 925 MHz
960 MHz
24
Vdd = 28 V
Pin = 2.8 W
Idq = 250 m A
Pin = 2.8 W
2000
26
945 MHz
Doc ID 12528 Rev 2
28
2500
30
Figure 12. Efficiency vs bias current
Figure 14. Efficiency vs supply voltage
60
50
40
30
20
10
60
50
40
30
20
10
0
0
12
0
960 MHz
890 MHz
14
500
16
925 MHz
945 MHz
18
1000
20
Vdd (V)
Idq (m A)
PD57070-E, PD57070S-E
22
960 MHz
890 MHz
1500
24
Idq = 250 m A
Pin = 2.8 W
925, 945 MHz
Vdd = 28 V
Pin = 2.8 W
26
2000
28
2500
30