SD57045-01 STMicroelectronics, SD57045-01 Datasheet

TRANSISTOR RF PWR LDMOST M250

SD57045-01

Manufacturer Part Number
SD57045-01
Description
TRANSISTOR RF PWR LDMOST M250
Manufacturer
STMicroelectronics
Datasheet

Specifications of SD57045-01

Transistor Type
LDMOS
Frequency
945MHz
Gain
15dB
Voltage - Rated
65V
Current Rating
5A
Current - Test
250mA
Voltage - Test
28V
Power - Output
45W
Package / Case
M250
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
5A
Drain Source Voltage (max)
65V
Output Power (max)
45W
Power Gain (typ)@vds
15dB
Frequency (max)
1GHz
Package Type
Case M-250
Pin Count
3
Forward Transconductance (typ)
2.7S
Input Capacitance (typ)@vds
80@28VpF
Output Capacitance (typ)@vds
40@28VpF
Reverse Capacitance (typ)
3.2@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
40%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
93000mW
Vswr (max)
10(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
497-5478
SD57045-01

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SD57045-01
Manufacturer:
ST
Quantity:
20 000
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
• BeO FREE PACKAGE
DESCRIPTION
The SD57045-01 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The SD57045-01 is designed for high gain
and broadband performance operating in common
source mode at 28 V. It is ideal for base station
applications requiring high linearity.
ABSOLUTE MAXIMUM RATINGS (T
THERMAL DATA
November, 19 2002
V
Symbol
R
(BR)DSS
OUT
P
V
T
V
th(j-c)
DISS
DGR
STG
I
Tj
GS
D
= 45W WITH 13 dB gain @ 945 MHz
Drain-Source Voltage
Drain-Gate Voltage (R
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70°C)
Max. Operating Junction Temperature
Storage Temperature
Junction -Case Thermal Resistance
GS
Parameter
= 1 M
CASE
= 25
°
C)
RF POWER TRANSISTORS
ORDER CODE
SD57045-01
1. Drain
2. Gate
The LdmoST FAMILY
3
PIN CONNECTION
epoxy sealed
-65 to + 200
M250
Value
SD57045-01
200
1.4
65
65
93
1
2
5
20
3. Source
SD57045-01
BRANDING
°C/W
Unit
°C
°C
W
V
V
V
A
1/11

Related parts for SD57045-01

SD57045-01 Summary of contents

Page 1

... The SD57045- common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045-01 is designed for high gain and broadband performance operating in common source mode ideal for base station applications requiring high linearity. ...

Page 2

... SD57045-01 ELECTRICAL SPECIFICATION (T STATIC Symbol (BR)DSS DSS GSS GS( DS(ON ISS OSS RSS GS DYNAMIC Symbol 250 mA OUT 250 mA IMD3 250 250 250 mA Load DD DQ mismatch ALL PHASE ANGLES note 945 MHz 1 PEP f = 945.1 MHz 2 IMPEDANCE DATA Typical Input FREQ. 925 MHz 930 MHz ...

Page 3

... MHz 100 Vds (V) Drain Current vs. Gate Voltage Id (A) 4 3.5 3 2.5 2 1.5 1 0.5 0 2.5 3 3.5 Vgs (V) Gate-Source Voltage vs. Case Temperature VGS (NORMALIZED) 1.04 1.02 Ciss 1 Coss 0.98 Crss 0. Safe Operating Area Y-Axis 0 Tcase (° 100 X-Axis SD57045- 1 250 100 3/11 ...

Page 4

... SD57045-01 TYPICAL PERFORMANCE (CW) Output Power and Power Gain vs. Input Power Pout ( Pout 0.5 1 1.5 Pin (W) Efficiency vs. Output Power Nc (%) Pout (W) Output Power vs. Drain Voltage Pout (W) 90 Vdd = 28 V Idq = 250 945 MHz Vds (V) 4/11 Power Gain vs. Output Power Gp (dB) Gp (dB 250 mA DQ ...

Page 5

... Mhz - 945.1 Mhz - 250mA - Case A Third Order Intercept Point Pout (dBm -10 -20 -30 -40 10 100 10 SD57045- 945 MHz f2 = 945.1 MHz Pin ( 250 945 MHz f2 = 945.1 MHz IMD3 IMD5 IMD7 Pout (WPEP) Fundamental IMD3 1 945 MHz f2 = 945.1 MHz ...

Page 6

... SD57045-01 COMMON SOURCE S-PARAMETER ( FREQ (MHz) 50 0.902 -168 60 0.902 -169 70 0.902 -168 80 0.902 -170 90 0.902 -170 100 0.903 -171 150 0.905 -173 200 0.910 -174 250 0.916 -174 300 0.921 -174 350 0.927 -175 400 0.933 -175 450 0.939 -175 500 0 ...

Page 7

... SD57045- S12 0.675 -163 1 0.676 -164 -0 0.677 -164 -1 0.679 -165 -2 0.681 -165 -3 0.683 -165 -9 0.700 -167 -14 0.722 -167 -18 0.748 ...

Page 8

... SD57045-01 945 MHz TEST CIRCUIT SCHEMATIC NOTES: 1. DIMENSIONS AT COMPONENT SYMBOLS ARE REFERENCE FOR COMPONENT PLACEMENT. 2. GAP BETWEEN GROUND & TRANSMISSION LINE = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] TYP. 3. DIMENSIONS OF INPUT AND OUTPUT COMPONENT FROM EDGE OF TRANSMISSION LINES. 945 MHz TEST CIRCUIT COMPONENT PART LIST ...

Page 9

... MHz PRODUCTION TEST FIXTURE 945 MHz TEST CIRCUIT PHOTOMASTER 6.4 inches SD57045-01 Ref. 7143566A 9/11 ...

Page 10

... SD57045-01 M250 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA DIM. MIN. A 5.21 B 2.16 C 5.59 D 8.89 E 9.40 F 0.11 G 0.89 H 1.45 I 2.67 Controlling dimension: Inches 10/11 mm TYP. MAX 5.71 0.205 2.92 0.085 6.09 0.220 9.40 0.350 9.91 0.370 0.15 0.004 1.14 0.035 1.70 0.057 3 ...

Page 11

... Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES http://www.st.com SD57045-01 11/11 ...

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