MRFG35005ANT1 Freescale Semiconductor, MRFG35005ANT1 Datasheet

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MRFG35005ANT1

Manufacturer Part Number
MRFG35005ANT1
Description
TRANSISTOR RF 4.5W 12V PLD-1.5
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFG35005ANT1

Transistor Type
pHEMT FET
Frequency
3.55GHz
Gain
11dB
Voltage - Rated
15V
Current Rating
1.7A
Current - Test
80mA
Voltage - Test
12V
Power - Output
4.5W
Package / Case
PLD-1.5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRFG35005ANT1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2007 - 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
• Typical Single - Carrier W - CDMA Performance: V
• 4.5 Watts P1dB @ 3550 MHz, CW
Features
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Drain- Source Voltage
Gate- Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
80 mA, P
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Select Documentation/Application Notes - AN1955.
Power Gain — 11 dB
Drain Efficiency — 26%
ACPR @ 5 MHz Offset — - 44 dBc in 3.84 MHz Channel Bandwidth
out
= 450 mWatts Avg., 3550 MHz, Channel Bandwidth =
(1)
Test Methodology
Test Methodology
Characteristic
Rating
DD
= 12 Volts, I
DQ
Rating
=
3
Symbol
Symbol
V
R
V
T
T
P
DSS
Package Peak Temperature
θJC
GS
stg
ch
in
Document Number: MRFG35005AN
MRFG35005ANT1
1C (Minimum)
IV (Minimum)
A (Minimum)
Class
260
3.5 GHz, 4.5 W, 12 V
CASE 466 - 03, STYLE 1
- 65 to +150
GaAs PHEMT
Value
POWER FET
Value
13.7
175
15
30
PLASTIC
- 5
PLD - 1.5
(2)
MRFG35005ANT1
Rev. 2, 6/2009
°C/W
Unit
dBm
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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MRFG35005ANT1 Summary of contents

Page 1

... IV (Minimum) Rating Package Peak Temperature 3 Rev. 2, 6/2009 3.5 GHz, 4 POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Value Unit 15 Vdc - 5 Vdc 30 dBm - 65 to +150 °C 175 °C (2) Value Unit 13.7 °C/W Class A (Minimum) Unit 260 °C MRFG35005ANT1 1 ...

Page 2

... Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Typical RF Performance (In Freescale Test Fixture, 50 οhm system) V Output Power Compression Point, CW MRFG35005ANT1 2 = 25°C unless otherwise noted) A Symbol I DSS ...

Page 3

... C22 C16 C14 C15 Z15 C13 C23 OUTPUT Z12 Z13 Z14 Z16 Z17 Z18 Z19 C24 C26 C25 = 3.5 r Part Number Manufacturer ATC AVX AVX ATC ATC ATC ATC ATC ATC Murata AVX AVX AVX AVX AVX AVX Vishay MRFG35005ANT1 SUPPLY RF 3 ...

Page 4

... V G− C11 C1 Figure 2. MRFG35005AN Test Circuit Component Layout MRFG35005ANT1 4 C8 C19 C20 C21 C10 C18 C5 C17 R1 C16 C14 C15 C3 C4 C12 C13 C2 C28 C29 C27 C26 MRFG35005AN Rev C22 C23 C24 C25 RF Device Data Freescale Semiconductor ...

Page 5

... Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Γ = 0.852é−115.6_, Γ = 0.737é−146. IRL ACPR OUTPUT POWER (dBm) out Figure 4. Single - Channel W - CDMA Adjacent and Γ are the impedances presented to the DUT −5 −10 −15 −20 −25 − MRFG35005ANT1 5 ...

Page 6

... Channel Power Ratio and IRL versus Output Power 14 V Single−Carrier W−CDMA, 3.84 MHz Channel 12 Bandwidth, PAR = 8 0.01% Probability (CCDF 3450 Figure 7. Single - Channel W - CDMA Power Gain NOTE: Data is generated from the test circuit shown. MRFG35005ANT1 6 TYPICAL CHARACTERISTICS = 12 Vdc mA 3550 MHz η ...

Page 7

... Figure 8. Single - Channel W - CDMA Adjacent Vdc mA 3550 MHz Single−Carrier OFDM 802.16d, 64 QAM 4 7 MHz Channel Bandwidth, Input Signal PAR = 9 0.01% Probability on CCDF η D EVM OUTPUT POWER (dBm) out Figure 9. Single - Channel OFDM Error Vector 0 −5 −10 −15 −20 −25 3650 MRFG35005ANT1 7 ...

Page 8

... Figure 10. Series Equivalent Source and Load Impedance MRFG35005ANT1 Ω load f = 3550 MHz Z source f = 3550 MHz Vdc mA 450 mW Avg out source load MHz W W 3550 5.6 - j31.2 8.3 - j14 Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground ...

Page 9

... MRFG35005ANT1 9 ...

Page 10

... MRFG35005ANT1 Vdc mA 25°C, 50 Ohm System) (continued ∠ φ 1.444 12.3 0.034 1.433 10.6 0.034 1.424 9 ...

Page 11

... S 0.006 0.012 0.15 U 0.006 0.012 0.15 ZONE V 0.000 0.021 0.00 ZONE W 0.000 0.010 0.00 ZONE X 0.000 0.010 0.00 MRFG35005ANT1 0.115 2.92 inches mm MAX 6.73 5.97 1.83 3.81 0.66 1.12 1.78 1.60 4.57 7.24 6.48 6.10 0.20 1.60 5.33 0.31 ...

Page 12

... June 2009 • Modified data sheet to reflect MSL rating change from result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516 MRFG35005ANT1 12 PRODUCT DOCUMENTATION REVISION HISTORY Description ...

Page 13

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007 - 2009. All rights reserved. MRFG35005ANT1 13 ...

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