MRF6S20010GNR1 Freescale Semiconductor, MRF6S20010GNR1 Datasheet - Page 16

• Manufacturer Part Number: MRF6S20010GNR1
• Description: MOSFET RF N-CH 28V 10W TO2704 GW
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S20010GNR1

• Transistor Type: N-Channel
• Frequency: 2.17GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

16
MRF6S20010NR1 MRF6S20010GNR1
−50
−55
−60
−65
−70
−75
−80
0.1
Figure 27. Spectral Regrowth at 400 kHz and
V
I
f = 1840 MHz
DQ
DD
= 130 mA
= 28 Vdc
600 kHz versus Output Power
P
out
, OUTPUT POWER (WATTS)
GSM EDGE TYPICAL CHARACTERISTICS
17
16
15
14
13
6
5
4
3
2
1
0
1800
Figure 25. Power Gain, Input Return Loss and Drain
0.1
1
Figure 26. Error Vector Magnitude and Drain
Efficiency versus Frequency @ P
V
I
f = 1840 MHz
DQ
1810 1820 1830 1840 1850 1860 1870 1880 1890
DD
= 130 mA
SR @ 400 kHz
= 28 Vdc
Efficiency versus Output Power
SR @ 600 kHz
P
out
, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
G
η
ps
D
1
10
IRL
η
D
EVM
−100
−110
−10
−20
−30
−40
−50
−60
−70
−80
−90
out
V
I
DQ
DD
= 130 mA
= 4 Watts
Center 1.96 GHz
= 28 Vdc
600 kHz
— 1805 - 1880 MHz
Reference Power
400 kHz
1900
10
Figure 28. EDGE Spectrum
60
50
40
30
20
10
0
GSM EDGE TEST SIGNAL
50
40
30
20
10
0
−10
−20
−30
−40
200 kHz
Freescale Semiconductor
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
RF Device Data
400 kHz
Span 2 MHz
600 kHz