BG 5120K E6327 Infineon Technologies, BG 5120K E6327 Datasheet - Page 4

• Manufacturer Part Number: BG 5120K E6327
• Description: MOSFET N-CH DUAL 8V 20MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 5120K E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 23dB
• Voltage - Rated: 8V
• Current Rating: 20mA
• Noise Figure: 1.1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.02 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000292148

Total power dissipation P
Output characteristics I
mW
mA
300
200
150
100
50
15
12
11
10
0
9
8
7
6
5
4
3
2
1
0
0
0
1
20
2
40
3
60
4
80
D
5
= ƒ(V
tot
100
6
= ƒ(T
DS
120 °C
7
S
)
1.4V
1.3V
1.2V
1.1V
)
T
V
V
S
D
150
9
4
Drain current I
V
Gate 1 current I
V
V
G2S
DS
G2S
mA
µA
= 5V
30
24
22
20
18
16
14
12
10
90
70
60
50
40
30
20
10
= 4V
= Parameter
8
6
4
2
0
0
-1
0
1
0.5
D
3
G1
= ƒ(I
= ƒ(V
5
1
G1
)
G1S
7
1.5
)
9
BG5120K
2009-10-01
11 µA
4.0V
3.0V
2.5V
2.0V
V
I
V G
G1
1
14
2.5