BG 5120K E6327 Infineon Technologies, BG 5120K E6327 Datasheet - Page 4
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BG 5120K E6327
Manufacturer Part Number
BG 5120K E6327
Description
MOSFET N-CH DUAL 8V 20MA SOT-363
Manufacturer
Infineon Technologies
Datasheet
1.BG_5120K_H6327.pdf
(10 pages)
Specifications of BG 5120K E6327
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 N-Channel (Dual)
Frequency
800MHz
Gain
23dB
Voltage - Rated
8V
Current Rating
20mA
Noise Figure
1.1dB
Current - Test
10mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.02 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000292148
Total power dissipation P
Output characteristics I
mW
mA
300
200
150
100
50
15
12
11
10
0
9
8
7
6
5
4
3
2
1
0
0
0
1
20
2
40
3
60
4
80
D
5
= ƒ(V
tot
100
6
= ƒ(T
DS
120 °C
7
S
)
1.4V
1.3V
1.2V
1.1V
)
T
V
V
S
D
150
9
4
Drain current I
V
Gate 1 current I
V
V
G2S
DS
G2S
mA
µA
= 5V
30
24
22
20
18
16
14
12
10
90
70
60
50
40
30
20
10
= 4V
= Parameter
8
6
4
2
0
0
-1
0
1
0.5
D
3
G1
= ƒ(I
= ƒ(V
5
1
G1
)
G1S
7
1.5
)
9
BG5120K
2009-10-01
11 µA
4.0V
3.0V
2.5V
2.0V
V
I
V G
G1
1
14
2.5