BG 5120K E6327 Infineon Technologies, BG 5120K E6327 Datasheet - Page 9
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BG 5120K E6327
Manufacturer Part Number
BG 5120K E6327
Description
MOSFET N-CH DUAL 8V 20MA SOT-363
Manufacturer
Infineon Technologies
Datasheet
1.BG_5120K_H6327.pdf
(10 pages)
Specifications of BG 5120K E6327
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 N-Channel (Dual)
Frequency
800MHz
Gain
23dB
Voltage - Rated
8V
Current Rating
20mA
Noise Figure
1.1dB
Current - Test
10mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.02 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000292148
Package Outline
Foot Print
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Pin 1
marking
Pin 1 marking
Laser marking
Pin 1
marking
0.65
1
6
0.2
2
±0.2
+0.1
-0.05
P
0.65
5
2
ackage SOT363
4
3
2.15
0.65
6x
4
0.1
0.3
M
9
0.65
0.1 MAX.
0.2
0.1
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
M
A
0.2
0.9
0.15
1.1
±0.1
+0.1
-0.05
A
BG5120K
2009-10-01