BG 5120K H6327 Infineon Technologies, BG 5120K H6327 Datasheet
BG 5120K H6327
Specifications of BG 5120K H6327
Related parts for BG 5120K H6327
BG 5120K H6327 Summary of contents
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Dual N-Channel MOSFET Tetrode • Low noise gain controlled input stages for UHF and VHF -tuners e. g. (NTSC, PAL) • Two AGC amplifiers in one single package • Integrated gate protection diodes • Low noise figure, high AGC-range • ...
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Thermal Resistance Parameter 1) Channel - soldering point 1 For calculation of R thJA please refer to Application Note Thermal Resistance Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage µ ...
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Electrical Characteristics at T Parameter AC Characteristics Forward transconductance Gate1 input capacitance MHz Output capacitance MHz Power gain 800 MHz 45 MHz Noise figure 800 MHz 45 MHz ...
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Total power dissipation P 300 mW 200 150 100 Output characteristics ...
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Gate 1 forward transconductance = ƒ( 5V Parameter DS G2S 40 4 3.0 V 2 ...
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Power gain G ps G2S f= 45MHz -10 -15 -20 0 0.5 1 1.5 2 Noise figure F = ƒ G2S f=800MHz ...
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AGC characteristic AGC = ƒ( 120 kΩ MHz 0.5 1 1.5 2 Crossmodulation V = (AGC) ...
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Crossmodulation test circuit R GEN 50Ω AGC DS 4n7 R1 10kΩ 2.2 uH 4n7 4n7 50 Ω RG1 BG5120K 4n7 RL 50Ω Semibiased 2009-10-01 ...
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Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...