BLF1820-90,112 NXP Semiconductors, BLF1820-90,112 Datasheet - Page 2

• Manufacturer Part Number: BLF1820-90,112
• Description: TRANSISTOR RF LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF1820-90,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 11dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 750mA
• Voltage - Test: 26V
• Power - Output: 90W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056520112; BLF1820-90; BLF1820-90

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
90 W LDMOS power transistor for base station
applications at frequencies from 1800 to 2000 MHz.
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2003 Feb 10
2-tone, class-AB
V
V
I
T
T
MODE OF OPERATION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
D
stg
j
Typical 2-tone performance at a supply voltage of 26 V
and I
– Output power = 90 W (PEP)
– Gain = 12 dB
– Efficiency = 32%
– dim = 26 dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (1800 to 2000 MHz)
Internally matched for ease of use.
RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the
1800 to 2000 MHz frequency range.
DS
GS
UHF power LDMOS transistor
DQ
SYMBOL
of 500 mA:
h
= 25 C in a common source test circuit.
f
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
1
= 2000; f
(MHz)
2
f
= 2000.1
PARAMETER
CAUTION
V
(V)
2
26
DS
PINNING
handbook, halfpage
PIN
90 (PEP)
1
2
3
(W)
P
Fig.1 Simplified outline SOT502A.
L
Top view
drain
gate
source, connected to flange
(dB)
>11
G
p
1
2
DESCRIPTION
MIN.
65
Product specification
BLF1820-90
>30
(%)
MBK394
3
D
65
12
+150
200
MAX.
15
(dBc)
d
V
V
A
UNIT
im
C
C
25