MRF6S9060MBR1 Freescale Semiconductor, MRF6S9060MBR1 Datasheet

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MRF6S9060MBR1

Manufacturer Part Number
MRF6S9060MBR1
Description
MOSFET RF N-CH 28V 14W TO-272-2
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S9060MBR1

Transistor Type
N-Channel
Frequency
880MHz
Gain
21.4dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
450mA
Voltage - Test
28V
Power - Output
14W
Package / Case
TO-272-2
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
© Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
GSM EDGE Application
• Typical GSM EDGE Performance: V
GSM Application
• Typical GSM Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 225°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
Table 1. Maximum Ratings
MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration
PCN12895 for more details. MRF6S9060NBR1 no longer manufactured.
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed for broadband commercial and industrial applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
I
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
P
Full Frequency Band (921 - 960 MHz)
Output Power
13 inch Reel.
13 inch Reel.
DQ
out
Power Gain — 20 dB
Drain Efficiency — 63%
Power Gain — 21.4 dB
Drain Efficiency — 32.1%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
MTTF calculators by product.
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
= 450 mA, P
= 21 Watts Avg., Full Frequency Band (921 - 960 MHz)
out
= 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
(1,2)
DD
= 28 Volts, I
Rating
DD
= 28 Volts, I
DQ
= 500 mA, P
DQ
= 500 mA,
out
DD
= 60 Watts,
= 28 Volts,
Symbol
V
V
T
T
DSS
T
GS
stg
C
BROADBAND RF POWER MOSFETs
J
Document Number: MRF6S9060N
MRF6S9060NBR1
MRF6S9060NR1 MRF6S9060NBR1
MRF6S9060NR1
880 MHz, 14 W AVG., 28 V
LATERAL N - CHANNEL
CASE 1265 - 09, STYLE 1
CASE 1337 - 04, STYLE 1
SINGLE N - CDMA
MRF6S9060NBR1
MRF6S9060NR1
- 65 to +150
- 0.5, +68
- 0.5, + 12
Value
TO - 270- 2
TO - 272- 2
PLASTIC
PLASTIC
150
225
Rev. 4, 8/2008
Unit
Vdc
Vdc
°C
°C
°C
1

Related parts for MRF6S9060MBR1

MRF6S9060MBR1 Summary of contents

Page 1

... Operating Junction Temperature 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts Volts, I ...

Page 2

... Vdc — 2.9 — Vdc — 0.18 0.4 Vdc — 33 — pF — 1.4 — pF — 106 — Avg 880 MHz, Single - Carrier out 20.5 21.4 23.5 dB 30.5 32.1 — % — dBc — (continued) RF Device Data Freescale Semiconductor ...

Page 3

... Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 ohm system 500 mA 921 - 960 MHz DQ out Power Gain Drain Efficiency Input Return Loss Compression Point out (f = 940 MHz) RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol G ps η D EVM SR1 SR2 G ps η ...

Page 4

... Microstrip 0.260″ x 0.065″ Microstrip Taconic 0.030″, ε = 3.5 r Part Number Manufacturer Fair- Rite Fair- Rite ATC Johanson ATC ATC Kemet Multicomp ATC ATC ATC Illinois Capacitor Coilcraft Vishay Vishay Vishay Vishay RF Device Data Freescale Semiconductor V SUPPLY C18 RF ...

Page 5

... Figure 2. MRF6S9060NR1(NBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor C19 B2 C8 C15 C11 C10 C16 C17 R4 C18 C12 C14 C13 TO−270/272 Surface / Bolt down MRF6S9060NR1 MRF6S9060NBR1 5 ...

Page 6

... ACPR −40 −8 −48 −12 ALT1 −56 −16 −20 −64 910 920 = 28 Watts Avg. out = 28 Vdc 880 MHz 880.1 MHz 450 mA 675 mA 550 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power RF Device Data Freescale Semiconductor 300 ...

Page 7

... Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS −10 DQ (f1 + f2)/2 = Center Frequency of 880 MHz −20 −30 3rd Order −40 5th Order −50 −60 7th Order −70 100 300 0.05 0.1 Figure 8. Intermodulation Distortion Products P3dB = 50 dBm (150 W) P1dB = 49 ...

Page 8

... P , OUTPUT POWER (WATTS) CW out Figure 12. Power Gain versus Output Power 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Avg., and η Vdc out 25_C 60 85_C 100 32 V 140 230 250 = 32.1%. RF Device Data Freescale Semiconductor ...

Page 9

... Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9 0.001 0.01% Probability on CCDF. 0.0001 PEAK−TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA RF Device Data Freescale Semiconductor N - CDMA TEST SIGNAL −10 −20 −30 −40 −50 −ALT1 in 30 kHz Integrated BW −60 −70 − ...

Page 10

... Test circuit impedance as measured from source gate to ground. = Test circuit impedance as measured load from drain to ground. Device Input Under Matching Test Network Z Z source load Output Matching Network RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S9060NR1 MRF6S9060NBR1 11 ...

Page 12

... MRF6S9060NR1 MRF6S9060NBR1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF6S9060NR1 MRF6S9060NBR1 13 ...

Page 14

... MRF6S9060NR1 MRF6S9060NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF6S9060NR1 MRF6S9060NBR1 15 ...

Page 16

... MRF6S9060NR1 MRF6S9060NBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps operating characteristics and location of MTTF calculator for device • Added Product Documentation and Revision History Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description the RF test condition voltage callout for V ...

Page 18

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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