MRF6S9060MBR1 Freescale Semiconductor, MRF6S9060MBR1 Datasheet - Page 6

• Manufacturer Part Number: MRF6S9060MBR1
• Description: MOSFET RF N-CH 28V 14W TO-272-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S9060MBR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 21.4dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 450mA
• Voltage - Test: 28V
• Power - Output: 14W
• Package / Case: TO-272-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -

6
MRF6S9060NR1 MRF6S9060NBR1
23
22
21
20
19
18
17
1
350 mA
450 mA
225 mA
550 mA
Figure 5. Two - Tone Power Gain versus
I
DQ
V
Two−Tone Measurements
= 675 mA
DD
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
P
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P
out
, OUTPUT POWER (WATTS) PEP
Output Power
10
21.6
21.4
21.2
20.8
20.6
20.4
20.2
21.8
21.6
21.4
21.2
20.8
20.6
22
21
21
20
840
840
V
N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes
8 Through 13
V
N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes
8 Through 13
DD
DD
= 28 Vdc, P
850
= 28 Vdc, P
850
IRL
G
TYPICAL CHARACTERISTICS
G
100
ps
ps
860
860
out
out
IRL
= 28 W (Avg.), I
= 14 W (Avg.), I
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
870
870
300
880
880
DQ
DQ
= 450 mA
= 450 mA
890
890
−10
−20
−30
−40
−50
−60
1
Figure 6. Third Order Intermodulation Distortion
900
I
900
V
Two−Tone Measurements
DQ
DD
350 mA
= 225 mA
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
η
D
910
910
450 mA
ACPR
ALT1
ACPR
ALT1
η
D
P
out
out
out
920
versus Output Power
920
, OUTPUT POWER (WATTS) PEP
50
48
46
44
−32
−40
−48
−56
40
35
30
−45
−50
−55
−60
−65
= 14 Watts Avg.
−64
= 28 Watts Avg.
550 mA
10
−8
−12
−16
−20
−24
−4
−8
−12
−16
−20
Freescale Semiconductor
675 mA
RF Device Data
100
300