MRF6S9060MR1 Freescale Semiconductor, MRF6S9060MR1 Datasheet - Page 2

• Manufacturer Part Number: MRF6S9060MR1
• Description: MOSFET RF N-CH 28V 14W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S9060MR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 21.4dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 450mA
• Voltage - Test: 28V
• Power - Output: 14W
• Package / Case: TO-270-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -

2
MRF6S9060NR1 MRF6S9060NBR1
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Case Temperature 80°C, 60 W CW
Case Temperature 80°C, 14 W CW
(V
(V
(V
(V
(V
(V
(V
(V
(V
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
DS
DS
GS
DS
DD
GS
DS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
DS
D
D
D
GS
GS
GS
= 200 μA)
= 450 mAdc, Measured in Functional Test)
= 1.5 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Test Methodology
Characteristic
Test Methodology
Characteristic
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
Rating
V
V
ACPR
I
I
I
DS(on)
C
C
GS(th)
GS(Q)
C
G
GSS
= 450 mA, P
IRL
DSS
DSS
η
3
oss
rss
iss
ps
D
Symbol
out
R
20.5
30.5
Min
Package Peak Temperature
—
—
—
—
—
—
—
—
—
—
θJC
1
= 14 W Avg., f = 880 MHz, Single - Carrier
- 47.6
- 15.3
0.18
21.4
32.1
260
Typ
106
2.9
1.4
33
—
—
—
2
1A (Minimum)
IV (Minimum)
A (Minimum)
Value
Class
0.77
0.88
Freescale Semiconductor
(1,2)
Max
23.5
0.4
- 45
10
—
—
—
—
—
- 9
1
1
3
RF Device Data
(continued)
°C/W
μAdc
μAdc
μAdc
Unit
Unit
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
°C
pF
pF
pF
%